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| Presentation | 2008-11-28 16:10 Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ)  ED2008-183 CPM2008-132 LQE2008-127 Link to ES Tech. Rep. Archives: ED2008-183 CPM2008-132 LQE2008-127 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated for ppm-order detection. We found that the 1 ppm hydrogen in air can be detected by the fabricated devices as a current variation of 1.6 mA. By using the least-square fit to the experimental data, the reliable lower detection value of hydrogen concentration for the present device can be estimated to be about 0.5 ppm, i.e., a natural hydrogen concentration in the air. In addition, the shorter turn-on and turn-off transient times have been estimated to be about 23 and 33 seconds at 110oC, respectively, in the case of the 100 ppm hydrogen. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | hydrogen gas sensor / AlGaN/GaN / high electron mobility transistor / catalytic action / part par million / palladium / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 321, ED2008-183, pp. 155-159, Nov. 2008. | |
| Paper # | ED2008-183 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-183 CPM2008-132 LQE2008-127 Link to ES Tech. Rep. Archives: ED2008-183 CPM2008-132 LQE2008-127 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors |
| Sub Title (in English) | |
| Keyword(1) | hydrogen gas sensor |
| Keyword(2) | AlGaN/GaN |
| Keyword(3) | high electron mobility transistor |
| Keyword(4) | catalytic action |
| Keyword(5) | part par million |
| Keyword(6) | palladium |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Noriyuki Takahashi |
| 1st Author's Affiliation | Tokyo Metropolitan University (Tokyo Metropolitan Univ) |
| 2nd Author's Name | Seiji Nakamura |
| 2nd Author's Affiliation | Tokyo Metropolitan University (Tokyo Metropolitan Univ) |
| 3rd Author's Name | Tsugunori Okumura |
| 3rd Author's Affiliation | Tokyo Metropolitan University (Tokyo Metropolitan Univ) |
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| Speaker | Author-1 |
| Date Time | 2008-11-28 16:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-183, CPM2008-132, LQE2008-127 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.155-159 |
| #Pages | 5 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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