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Paper Abstract and Keywords
Presentation 2008-11-28 09:00
280nm-band InAlGaN-based high-power deep-UV LEDs
Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.) ED2008-169 CPM2008-118 LQE2008-113 Link to ES Tech. Rep. Archives: ED2008-169 CPM2008-118 LQE2008-113
Abstract (in Japanese) (See Japanese page) 
(in English) Quaternary InAlGaN alloy is attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs), because efficient UV emission can be obtained due to In-incorporation effects. In this study, we succeeded in the growth of high-quality InAlGaN with high-Al-content (>50%) by using quite low growth rate. We also revealed that the oxygen impurity concentration was significantly reduced and the surface roughness was improved for the quaternary InAlGaN by introducing the light-doping of Si. At last, we demonstrated extremely high internal quantum efficiency (>80%) for 280 nm-band InAlGaN quantum wells (QWs) at room temperature (RT). We fabricated a 280 nm-band InAlGaN-based LED on an AlN/sapphire template. The maximum output power and the external quantum efficiency (EQE) were 10.6 mW and 1.2 %, respectively, under RT CW operation.
Keyword (in Japanese) (See Japanese page) 
(in English) quaternary InAlGaN / UV-LED / external quantum efficiency / In segregation effect / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 323, LQE2008-113, pp. 83-88, Nov. 2008.
Paper # LQE2008-113 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2008-169 CPM2008-118 LQE2008-113 Link to ES Tech. Rep. Archives: ED2008-169 CPM2008-118 LQE2008-113

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 280nm-band InAlGaN-based high-power deep-UV LEDs 
Sub Title (in English)  
Keyword(1) quaternary InAlGaN  
Keyword(2) UV-LED  
Keyword(3) external quantum efficiency  
Keyword(4) In segregation effect  
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1st Author's Name Hideki Hirayama  
1st Author's Affiliation RIKEN (RIKEN)
2nd Author's Name Sashie Fujikawa  
2nd Author's Affiliation RIKEN (RIKEN)
3rd Author's Name Takayoshi Takano  
3rd Author's Affiliation Matsushita Electric Works Ltd. (Matsushita Electric Works Ltd.)
4th Author's Name Kenji Tsubaki  
4th Author's Affiliation Matsushita Electric Works Ltd. (Matsushita Electric Works Ltd.)
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Speaker Author-1 
Date Time 2008-11-28 09:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2008-169, CPM2008-118, LQE2008-113 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.83-88 
#Pages
Date of Issue 2008-11-20 (ED, CPM, LQE) 


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