Paper Abstract and Keywords |
Presentation |
2008-11-28 09:00
280nm-band InAlGaN-based high-power deep-UV LEDs Hideki Hirayama, Sashie Fujikawa (RIKEN), Takayoshi Takano, Kenji Tsubaki (Matsushita Electric Works Ltd.) ED2008-169 CPM2008-118 LQE2008-113 Link to ES Tech. Rep. Archives: ED2008-169 CPM2008-118 LQE2008-113 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Quaternary InAlGaN alloy is attracting much attention as candidate material for realizing deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs), because efficient UV emission can be obtained due to In-incorporation effects. In this study, we succeeded in the growth of high-quality InAlGaN with high-Al-content (>50%) by using quite low growth rate. We also revealed that the oxygen impurity concentration was significantly reduced and the surface roughness was improved for the quaternary InAlGaN by introducing the light-doping of Si. At last, we demonstrated extremely high internal quantum efficiency (>80%) for 280 nm-band InAlGaN quantum wells (QWs) at room temperature (RT). We fabricated a 280 nm-band InAlGaN-based LED on an AlN/sapphire template. The maximum output power and the external quantum efficiency (EQE) were 10.6 mW and 1.2 %, respectively, under RT CW operation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
quaternary InAlGaN / UV-LED / external quantum efficiency / In segregation effect / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 323, LQE2008-113, pp. 83-88, Nov. 2008. |
Paper # |
LQE2008-113 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-169 CPM2008-118 LQE2008-113 Link to ES Tech. Rep. Archives: ED2008-169 CPM2008-118 LQE2008-113 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2008-11-27 - 2008-11-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2008-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
280nm-band InAlGaN-based high-power deep-UV LEDs |
Sub Title (in English) |
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Keyword(1) |
quaternary InAlGaN |
Keyword(2) |
UV-LED |
Keyword(3) |
external quantum efficiency |
Keyword(4) |
In segregation effect |
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1st Author's Name |
Hideki Hirayama |
1st Author's Affiliation |
RIKEN (RIKEN) |
2nd Author's Name |
Sashie Fujikawa |
2nd Author's Affiliation |
RIKEN (RIKEN) |
3rd Author's Name |
Takayoshi Takano |
3rd Author's Affiliation |
Matsushita Electric Works Ltd. (Matsushita Electric Works Ltd.) |
4th Author's Name |
Kenji Tsubaki |
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Matsushita Electric Works Ltd. (Matsushita Electric Works Ltd.) |
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Speaker |
Author-1 |
Date Time |
2008-11-28 09:00:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2008-169, CPM2008-118, LQE2008-113 |
Volume (vol) |
vol.108 |
Number (no) |
no.321(ED), no.322(CPM), no.323(LQE) |
Page |
pp.83-88 |
#Pages |
6 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
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