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| Presentation | 2008-11-28 11:40 Device simulation of HfO2/AlGaN/GaN MOSFET -- effects of HfO2/AlGaN interface -- Yoshihisa Hayashi, Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)  ED2008-175 CPM2008-124 LQE2008-119 Link to ES Tech. Rep. Archives: ED2008-175 CPM2008-124 LQE2008-119 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Two-dimensional device simulations of HfO2/AlGaN/GaN MOSFETs have been carried out to investigate the operation mechanism and the effects of interface traps on the device characteristics. First, devices without the traps were studied. Although the transconductance increases with increase in the gate voltage for small Vgs, it decreases for larger Vgs. This is because a 2nd channel is formed at HfO2/AlGaN interface where the electron velocity is rather low. Next, simulations for devices with donor type traps at HfO2/AlGaN interface have been performed. The shift of the threshold voltage to the negative direction and the decrease in gm different from previous gm decrease are observed. The gm decrease is caused because the increase of Vgs is expended to increase the trapped electrons and can not change the electron density at the AlGaN/GaN interface. Amounts of the threshold voltage shift and the gm decrease are dependent on the trap concentration. It has been shown that if the trap concentration is less than 3.5x1011 cm-2, the threshold voltage shift is less than 0.3 V and the gm decrease is less than 10%. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HfO2/AlGaN/GaN MOSFET / device simulation / interface trap / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 321, ED2008-175, pp. 115-120, Nov. 2008. | |
| Paper # | ED2008-175 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-175 CPM2008-124 LQE2008-119 Link to ES Tech. Rep. Archives: ED2008-175 CPM2008-124 LQE2008-119 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device simulation of HfO2/AlGaN/GaN MOSFET |
| Sub Title (in English) | effects of HfO2/AlGaN interface |
| Keyword(1) | HfO2/AlGaN/GaN MOSFET |
| Keyword(2) | device simulation |
| Keyword(3) | interface trap |
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| 1st Author's Name | Yoshihisa Hayashi |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Shun Sugiura |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Shigeru Kishimoto |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Takashi Mizutani |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-11-28 11:40:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-175, CPM2008-124, LQE2008-119 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.115-120 |
| #Pages | 6 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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