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| Presentation | 2008-11-28 10:15 Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates Atsushi Yamaguchi (Kanazawa Inst. of Technology)  ED2008-172 CPM2008-121 LQE2008-116 Link to ES Tech. Rep. Archives: ED2008-172 CPM2008-121 LQE2008-116 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Polarization properties in InGaN quantum wells on non-C AlInGaN alloy substrates are theoretically investigated. It is shown that the polarization direction of quantum-well emission switches depending on the substrate alloy composition, substrate orientation and quantum well width, and that these polarization switches are caused by the strain anisotropy and quantum confinement effects in the quantum wells. On the basis of the calculation results, it is predicted that the utilization of InGaN or AlInGaN alloy substrates is beneficial to obtain desirable polarization properties for the formation of cleaved-facet cavity mirrors in laser diodes on non-C substrates. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | optical anisotropy / polarization / InGaN quantum well / alloy substrates / valence band / strain / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 323, LQE2008-116, pp. 97-102, Nov. 2008. | |
| Paper # | LQE2008-116 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-172 CPM2008-121 LQE2008-116 Link to ES Tech. Rep. Archives: ED2008-172 CPM2008-121 LQE2008-116 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Theroretical Calculations of Polarization Properties in InGaN Quantum Wells on Non-C (Al)InGaN Alloy Substrates |
| Sub Title (in English) | |
| Keyword(1) | optical anisotropy |
| Keyword(2) | polarization |
| Keyword(3) | InGaN quantum well |
| Keyword(4) | alloy substrates |
| Keyword(5) | valence band |
| Keyword(6) | strain |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Atsushi Yamaguchi |
| 1st Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Inst. of Technology) |
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| Speaker | Author-1 |
| Date Time | 2008-11-28 10:15:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2008-172, CPM2008-121, LQE2008-116 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.97-102 |
| #Pages | 6 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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