Paper Abstract and Keywords |
Presentation |
2008-11-28 15:45
Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.) ED2008-182 CPM2008-131 LQE2008-126 Link to ES Tech. Rep. Archives: ED2008-182 CPM2008-131 LQE2008-126 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have examined the effect on a two-dimensional electron gas(2DEG) in AlGaN/GaN hetero structures by using the “micro-origami” method. In this study, lattice strain, bending deformation, and variations of piezoelectric charge as well as 2DEG density were analyzed for a basic cantilever of the bimetal structure. These simulations were performed by using the finite element method and the finite difference method. As a result, the 2DEG density at the Al0.2Ga0.8N/GaN hetero-interface was found to decrease approximately 37%. The result suggests that the 2DEG density is controllable in the micro-origami type of MEMS structures. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN / Piezoelectric charges / 2DEG / lattice strain / MEMS / micro-origami / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 321, ED2008-182, pp. 149-154, Nov. 2008. |
Paper # |
ED2008-182 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-182 CPM2008-131 LQE2008-126 Link to ES Tech. Rep. Archives: ED2008-182 CPM2008-131 LQE2008-126 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2008-11-27 - 2008-11-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2008-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure |
Sub Title (in English) |
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Keyword(1) |
AlGaN/GaN |
Keyword(2) |
Piezoelectric charges |
Keyword(3) |
2DEG |
Keyword(4) |
lattice strain |
Keyword(5) |
MEMS |
Keyword(6) |
micro-origami |
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Keyword(8) |
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1st Author's Name |
Hajime Tsukahara |
1st Author's Affiliation |
Tokyo Metropolitan University (Tokyo Metropolitan univ.) |
2nd Author's Name |
Seiji Nakamura |
2nd Author's Affiliation |
Tokyo Metropolitan University (Tokyo Metropolitan univ.) |
3rd Author's Name |
Tsugunori Okumura |
3rd Author's Affiliation |
Tokyo Metropolitan University (Tokyo Metropolitan univ.) |
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Speaker |
Author-1 |
Date Time |
2008-11-28 15:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-182, CPM2008-131, LQE2008-126 |
Volume (vol) |
vol.108 |
Number (no) |
no.321(ED), no.322(CPM), no.323(LQE) |
Page |
pp.149-154 |
#Pages |
6 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
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