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Paper Abstract and Keywords
Presentation 2008-11-28 11:15
Optimum Design of AlGaN/GaN HEMTs with Field Plate
Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-174 CPM2008-123 LQE2008-118 Link to ES Tech. Rep. Archives: ED2008-174 CPM2008-123 LQE2008-118
Abstract (in Japanese) (See Japanese page) 
(in English) We have analyzed the electric field distribution for AlGaN/GaN HEMTs with various types of graded field plates using an ensemble Monte Carlo 2D device simulation. It was found that the graded field plate, where the dielectric film thickness under the field plate gradually increases along gate to drain direction, was effective to minimize the peak electric field strength in the channel layer. Empirical equations expressing the breakdown voltage as functions of device parameters have been derived. We have also analyzed the breakdown characteristics, taking breakdown fields in semiconductor materials as well as those in dielectric materials into account. Simulation results show that a dielectric film with a wide bandgap and a high dielectric constant, such as Al2O3, is desirable to ensure excellent breakdown characteristics. The highest breakdown voltage of around 3000V is predicted for a device with a graded field plate length of 5μm.
Keyword (in Japanese) (See Japanese page) 
(in English) field plate / GaN / HEMT / breakdown voltage / Monte Carlo simulation / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 321, ED2008-174, pp. 109-114, Nov. 2008.
Paper # ED2008-174 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-174 CPM2008-123 LQE2008-118 Link to ES Tech. Rep. Archives: ED2008-174 CPM2008-123 LQE2008-118

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optimum Design of AlGaN/GaN HEMTs with Field Plate 
Sub Title (in English)  
Keyword(1) field plate  
Keyword(2) GaN  
Keyword(3) HEMT  
Keyword(4) breakdown voltage  
Keyword(5) Monte Carlo simulation  
1st Author's Name Ryosuke Sakai  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Tomotaka Okai  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Kenji Shiojima  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
4th Author's Name Masaaki Kuzuhara  
4th Author's Affiliation University of Fukui (Univ. of Fukui)
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Date Time 2008-11-28 11:15:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2008-174,IEICE-CPM2008-123,IEICE-LQE2008-118 
Volume (vol) IEICE-108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.109-114 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-11-20,IEICE-CPM-2008-11-20,IEICE-LQE-2008-11-20 

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