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| Presentation | 2008-11-27 11:20 Improvement of AlN-template quality for deep-UV and UV light emitters Tomohito Takeda, Hideaki Anzai, Hideo Kawanishi (Kogakuin)  ED2008-156 CPM2008-105 LQE2008-100 Link to ES Tech. Rep. Archives: ED2008-156 CPM2008-105 LQE2008-100 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Misfit-dislocation and related defects were grown on hetero-interface between substrate and epitaxial layer, and influence to light emitter’s efficiency, in ordinarily speaking. Up to this time, we have reported on (AlN/GaN) Multi-Buffer Layer structure and Alternate Source–Feeding MO-VPE technique for improving crystalline quality, because its affect to emission efficiency of optical devices. In this report, we are discussing on old and new improving technique of the crystalline quality of AlN template, especially edge-type dislocation, for UV and deep-UV light emitter applications. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Deep-UV semiconductor laser / AlN-Template / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 323, LQE2008-100, pp. 21-24, Nov. 2008. | |
| Paper # | LQE2008-100 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-156 CPM2008-105 LQE2008-100 Link to ES Tech. Rep. Archives: ED2008-156 CPM2008-105 LQE2008-100 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of AlN-template quality for deep-UV and UV light emitters |
| Sub Title (in English) | |
| Keyword(1) | Deep-UV semiconductor laser |
| Keyword(2) | AlN-Template |
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| 1st Author's Name | Tomohito Takeda |
| 1st Author's Affiliation | Kogakuin University (Kogakuin) |
| 2nd Author's Name | Hideaki Anzai |
| 2nd Author's Affiliation | Kogakuin University (Kogakuin) |
| 3rd Author's Name | Hideo Kawanishi |
| 3rd Author's Affiliation | Kogakuin University (Kogakuin) |
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| Speaker | Author-1 |
| Date Time | 2008-11-27 11:20:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2008-156, CPM2008-105, LQE2008-100 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.21-24 |
| #Pages | 4 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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