Paper Abstract and Keywords |
Presentation |
2008-11-27 17:15
Toward high-power operation of 230nm-band AlGaN UV-LED Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST) ED2008-167 CPM2008-116 LQE2008-111 Link to ES Tech. Rep. Archives: ED2008-167 CPM2008-116 LQE2008-111 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
210-350 nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive light sources for the application to sterilization, medical fields etc. In this study, we realized high-power operations of AlGaN multi-quantum well (MQW) LEDs on high quality AlN/sapphire templates. We obtained significant increase of the 220 nm-band emission from AlGaN MQW LEDs by reducing the quantum well thickness from 4 nm to 1.5 nm. We also introduced AlN electron blocking layer (EBL) in order to improve the electron injection efficiency by suppressing electron overflow. We revealed that the output power of the 250 nm-band AlGaN LEDs was markedly increased by introducing AlN EBL. We obtained output power of 0.4mW and the external quantum efficiency (EQE) of 0.034% from 234nm AlGaN-MQW LED under room temperature (RT) continuous wave (CW) operation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / UV-LEDs / MOCVD / electron blocking layer / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 323, LQE2008-111, pp. 71-76, Nov. 2008. |
Paper # |
LQE2008-111 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-167 CPM2008-116 LQE2008-111 Link to ES Tech. Rep. Archives: ED2008-167 CPM2008-116 LQE2008-111 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2008-11-27 - 2008-11-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2008-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Toward high-power operation of 230nm-band AlGaN UV-LED |
Sub Title (in English) |
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Keyword(1) |
AlGaN |
Keyword(2) |
UV-LEDs |
Keyword(3) |
MOCVD |
Keyword(4) |
electron blocking layer |
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1st Author's Name |
Norimichi Noguchi |
1st Author's Affiliation |
RIKEN/Saitama University/JST CREST (RIKEN/Saitama Univ./JST CREST) |
2nd Author's Name |
Hideki Hirayama |
2nd Author's Affiliation |
RIEKN/JST CREST (RIKEN/JST CREST) |
3rd Author's Name |
Jun Norimatsu |
3rd Author's Affiliation |
RIKEN/Saitama University (RIKEN/Saitama Univ.) |
4th Author's Name |
Norihiko Kamata |
4th Author's Affiliation |
Saitama University/JST CREST (Saitama Univ./JST CREST) |
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Speaker |
Author-1 |
Date Time |
2008-11-27 17:15:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2008-167, CPM2008-116, LQE2008-111 |
Volume (vol) |
vol.108 |
Number (no) |
no.321(ED), no.322(CPM), no.323(LQE) |
Page |
pp.71-76 |
#Pages |
6 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
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