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Paper Abstract and Keywords
Presentation 2008-11-27 17:15
Toward high-power operation of 230nm-band AlGaN UV-LED
Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST) ED2008-167 CPM2008-116 LQE2008-111 Link to ES Tech. Rep. Archives: ED2008-167 CPM2008-116 LQE2008-111
Abstract (in Japanese) (See Japanese page) 
(in English) 210-350 nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive light sources for the application to sterilization, medical fields etc. In this study, we realized high-power operations of AlGaN multi-quantum well (MQW) LEDs on high quality AlN/sapphire templates. We obtained significant increase of the 220 nm-band emission from AlGaN MQW LEDs by reducing the quantum well thickness from 4 nm to 1.5 nm. We also introduced AlN electron blocking layer (EBL) in order to improve the electron injection efficiency by suppressing electron overflow. We revealed that the output power of the 250 nm-band AlGaN LEDs was markedly increased by introducing AlN EBL. We obtained output power of 0.4mW and the external quantum efficiency (EQE) of 0.034% from 234nm AlGaN-MQW LED under room temperature (RT) continuous wave (CW) operation.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / UV-LEDs / MOCVD / electron blocking layer / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 323, LQE2008-111, pp. 71-76, Nov. 2008.
Paper # LQE2008-111 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2008-167 CPM2008-116 LQE2008-111 Link to ES Tech. Rep. Archives: ED2008-167 CPM2008-116 LQE2008-111

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Toward high-power operation of 230nm-band AlGaN UV-LED 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) UV-LEDs  
Keyword(3) MOCVD  
Keyword(4) electron blocking layer  
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1st Author's Name Norimichi Noguchi  
1st Author's Affiliation RIKEN/Saitama University/JST CREST (RIKEN/Saitama Univ./JST CREST)
2nd Author's Name Hideki Hirayama  
2nd Author's Affiliation RIEKN/JST CREST (RIKEN/JST CREST)
3rd Author's Name Jun Norimatsu  
3rd Author's Affiliation RIKEN/Saitama University (RIKEN/Saitama Univ.)
4th Author's Name Norihiko Kamata  
4th Author's Affiliation Saitama University/JST CREST (Saitama Univ./JST CREST)
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Speaker Author-1 
Date Time 2008-11-27 17:15:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2008-167, CPM2008-116, LQE2008-111 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.71-76 
#Pages
Date of Issue 2008-11-20 (ED, CPM, LQE) 


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