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Paper Abstract and Keywords
Presentation 2008-11-27 17:40
270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ED2008-168 CPM2008-117 LQE2008-112 Link to ES Tech. Rep. Archives: ED2008-168 CPM2008-117 LQE2008-112
Abstract (in Japanese) (See Japanese page) 
(in English) 250-280 nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractive much attention for the application to sterilization or medical use. The realization of low threading dislocation density (TDD) AlN template on sapphire substrate is considerably important in order to realize high-efficiency and high-power AlGaN-based DUV-LEDs. In this work, we fabricated AlGaN quantum well (QW) LEDs on Low TDD AlN template fabricated by epitaxial lateral overgrowth (ELO) method, and realized CW milliwatt power operation of AlGaN DUV-LED. First we grew initial AlN on c-plane sapphire substrate by using ammonia (NH3) pulse-flow multilayer (ML) growth method. After we formed 5/3 μm AlN stripes on the initial AlN, we grew thick ELO-AlN layer. We fabricated the AlGaN-3QWs LED on the ELO-AlN. Intense 273 nm emission peak was obtained from the AlGaN LED, and the maximum output power was 2.7mW, the maximum external quantum efficiency (EQE) was 0.04%.
Keyword (in Japanese) (See Japanese page) 
(in English) ELO-AlN / ammonia pulse-flow multilayer growth method / UV-LED / MOCVD / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 323, LQE2008-112, pp. 77-82, Nov. 2008.
Paper # LQE2008-112 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
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Download PDF ED2008-168 CPM2008-117 LQE2008-112 Link to ES Tech. Rep. Archives: ED2008-168 CPM2008-117 LQE2008-112

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template 
Sub Title (in English)  
Keyword(1) ELO-AlN  
Keyword(2) ammonia pulse-flow multilayer growth method  
Keyword(3) UV-LED  
Keyword(4) MOCVD  
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1st Author's Name Jun Norimatsu  
1st Author's Affiliation RIKEN (RIKEN)
2nd Author's Name Hideki Hirayama  
2nd Author's Affiliation RIKEN (RIKEN)
3rd Author's Name Sachie Fujikawa  
3rd Author's Affiliation RIKEN (RIKEN)
4th Author's Name Norimichi Noguchi  
4th Author's Affiliation RIKEN (RIKEN)
5th Author's Name Takayoshi Takano  
5th Author's Affiliation Matsushita Electric Works, Ltd. (Matsushita Electric Works)
6th Author's Name Kenji Tsubaki  
6th Author's Affiliation RIKEN (RIKEN)
7th Author's Name Norihiko Kamata  
7th Author's Affiliation Saitama University/JST CREST (Saitama University/JST CREST)
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Speaker Author-1 
Date Time 2008-11-27 17:40:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2008-168, CPM2008-117, LQE2008-112 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.77-82 
#Pages
Date of Issue 2008-11-20 (ED, CPM, LQE) 


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