Paper Abstract and Keywords |
Presentation |
2008-11-14 15:00
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) SDM2008-179 Link to ES Tech. Rep. Archives: SDM2008-179 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by using a new 3D NEGF technique. A single donor induces VT shift, and its impact is most significant when the donor is located at the top of the potential barrier, while on current is not affected so much due to the screening effect. To reduce the intrinsic device parameter fluctuation, control of lateral S/D doing abruptness is important, and gate-all-around structure has better robustness than the double gate structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
nonequilibrium Green's function method / MOSFET / device simulation / fluctuation / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 292, SDM2008-179, pp. 61-66, Nov. 2008. |
Paper # |
SDM2008-179 |
Date of Issue |
2008-11-06 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-179 Link to ES Tech. Rep. Archives: SDM2008-179 |
Conference Information |
Committee |
SDM |
Conference Date |
2008-11-13 - 2008-11-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit Simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors |
Sub Title (in English) |
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Keyword(1) |
nonequilibrium Green's function method |
Keyword(2) |
MOSFET |
Keyword(3) |
device simulation |
Keyword(4) |
fluctuation |
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1st Author's Name |
Yoshinari Kamakura |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Gennady Mil'nikov |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Nobuya Mori |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
4th Author's Name |
Tatsuya Ezaki |
4th Author's Affiliation |
Hiroshima Univeristy (Hiroshima Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-11-14 15:00:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-179 |
Volume (vol) |
vol.108 |
Number (no) |
no.292 |
Page |
pp.61-66 |
#Pages |
6 |
Date of Issue |
2008-11-06 (SDM) |
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