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Paper Abstract and Keywords
Presentation 2008-10-30 14:30
Lowering the resistivity of Al dope ZnO films deposited by a magnetron sputtering with a third electrode
Yutaka Oshima, Yuichiro Makino (nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech,), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (nagaoka Univ. of Tech.) CPM2008-78 Link to ES Tech. Rep. Archives: CPM2008-78
Abstract (in Japanese) (See Japanese page) 
(in English) Improvement of the uniformity in the resistivity of Al doped ZnO (AZO) films has been obtained using a radio frequency (rf) magnetron sputtering with a third electrode. In order to further lower the resistivity of the AZO films, hydrogen doping by the hydrogen plasma annealing was investigated. As a result, the electron density increased. Hall mobility also increased perhaps due to the reduction of the adsorbed oxygen on the grain boundary by the hydrogen annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) AZO / rf magnetron sputtering / third electrode / hydrogen plasma annealing / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 269, CPM2008-78, pp. 19-22, Oct. 2008.
Paper # CPM2008-78 
Date of Issue 2008-10-23 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2008-10-30 - 2008-10-31 
Place (in Japanese) (See Japanese page) 
Place (in English) Niigata Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process of Thin Film formation and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2008-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lowering the resistivity of Al dope ZnO films deposited by a magnetron sputtering with a third electrode 
Sub Title (in English)  
Keyword(1) AZO  
Keyword(2) rf magnetron sputtering  
Keyword(3) third electrode  
Keyword(4) hydrogen plasma annealing  
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1st Author's Name Yutaka Oshima  
1st Author's Affiliation Nagaoka University of Technology (nagaoka Univ. of Tech.)
2nd Author's Name Yuichiro Makino  
2nd Author's Affiliation Nagaoka University of Technology (nagaoka Univ. of Tech.)
3rd Author's Name Hironori Katagiri  
3rd Author's Affiliation Nagaoka National College of Technology (Nagaoka National College of Tech,)
4th Author's Name Kazuo Jinbo  
4th Author's Affiliation Nagaoka National College of Technology (Nagaoka National College of Tech,)
5th Author's Name Yuichiro Kuroki  
5th Author's Affiliation Nagaoka University of Technology (nagaoka Univ. of Tech.)
6th Author's Name Kanji Yasui  
6th Author's Affiliation Nagaoka University of Technology (nagaoka Univ. of Tech.)
7th Author's Name Masasuke Takata  
7th Author's Affiliation Nagaoka University of Technology (nagaoka Univ. of Tech.)
8th Author's Name Tadashi Akahane  
8th Author's Affiliation Nagaoka University of Technology (nagaoka Univ. of Tech.)
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Speaker Author-1 
Date Time 2008-10-30 14:30:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2008-78 
Volume (vol) vol.108 
Number (no) no.269 
Page pp.19-22 
#Pages
Date of Issue 2008-10-23 (CPM) 


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