Paper Abstract and Keywords |
Presentation |
2008-10-30 14:30
Lowering the resistivity of Al dope ZnO films deposited by a magnetron sputtering with a third electrode Yutaka Oshima, Yuichiro Makino (nagaoka Univ. of Tech.), Hironori Katagiri, Kazuo Jinbo (Nagaoka National College of Tech,), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (nagaoka Univ. of Tech.) CPM2008-78 Link to ES Tech. Rep. Archives: CPM2008-78 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Improvement of the uniformity in the resistivity of Al doped ZnO (AZO) films has been obtained using a radio frequency (rf) magnetron sputtering with a third electrode. In order to further lower the resistivity of the AZO films, hydrogen doping by the hydrogen plasma annealing was investigated. As a result, the electron density increased. Hall mobility also increased perhaps due to the reduction of the adsorbed oxygen on the grain boundary by the hydrogen annealing. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AZO / rf magnetron sputtering / third electrode / hydrogen plasma annealing / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 269, CPM2008-78, pp. 19-22, Oct. 2008. |
Paper # |
CPM2008-78 |
Date of Issue |
2008-10-23 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2008-78 Link to ES Tech. Rep. Archives: CPM2008-78 |
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