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| Presentation | 2008-10-30 13:50 Optical properties of Ge nanodots capped by wide gap semiconductors Haruki Suto, Tomoyoshi Kuroda, Ariyuki Kato, Hiroshi Nishiyama, Yasunobu Inoue, Tadashi Akahane, Masasuke Takata, Kanji Yasui (Nagaoka Univ. of Tech.)  CPM2008-77 Link to ES Tech. Rep. Archives: CPM2008-77 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Surface structure and surface composition of Ge and SiC nanodot-fabricated surface on a Si(001) substrate using monomethylgermane were investigated by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). After the formation of capping layers by Si and SiC on the Ge, SiC nanodot surface, photoluminescence spectra were also measured at 34K. From the quantitative analysis of XPS spectra, it was estimated that the Ge and SiC nanodots exsisted in the ratio of about 1:2. PL peak around 1.04 eV, which is derived from the Ge nanodots, was observed. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge nanodot / SiC nanodot / monomethylgermane / STM / XPS / PL / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 269, CPM2008-77, pp. 13-18, Oct. 2008. | |
| Paper # | CPM2008-77 | |
| Date of Issue | 2008-10-23 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | CPM2008-77 Link to ES Tech. Rep. Archives: CPM2008-77 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2008-10-30 - 2008-10-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niigata Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process of Thin Film formation and Materials, etc. |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2008-10-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Optical properties of Ge nanodots capped by wide gap semiconductors |
| Sub Title (in English) | |
| Keyword(1) | Ge nanodot |
| Keyword(2) | SiC nanodot |
| Keyword(3) | monomethylgermane |
| Keyword(4) | STM |
| Keyword(5) | XPS |
| Keyword(6) | PL |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Haruki Suto |
| 1st Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 2nd Author's Name | Tomoyoshi Kuroda |
| 2nd Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 3rd Author's Name | Ariyuki Kato |
| 3rd Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 4th Author's Name | Hiroshi Nishiyama |
| 4th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 5th Author's Name | Yasunobu Inoue |
| 5th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 6th Author's Name | Tadashi Akahane |
| 6th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 7th Author's Name | Masasuke Takata |
| 7th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
| 8th Author's Name | Kanji Yasui |
| 8th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2008-10-30 13:50:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2008-77 |
| Volume (vol) | vol.108 |
| Number (no) | no.269 |
| Page | pp.13-18 |
| #Pages | 6 |
| Date of Issue | 2008-10-23 (CPM) |
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