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Paper Abstract and Keywords
Presentation 2008-10-22 17:30
An Ultra-low Power Voltage Reference consisting of Subthreshold MOSFETs
Ken Ueno (Hokkaido Univ.), Tetsuya Hirose (Kobe Univ.), Tetsuya Asai, Yoshihito Amemiya (Hokkaido Univ.) ICD2008-68 Link to ES Tech. Rep. Archives: ICD2008-68
Abstract (in Japanese) (See Japanese page) 
(in English) An ultra-low power CMOS voltage reference circuit has been fabricated in
0.35-um standard CMOS process. The circuit generates a reference voltage based on threshold voltage of a MOSFET at absolute zero temperature. Theoretical analyses and experimental results showed that the circuit generates a quite stable reference voltage of 745 mV on average. The temperature coefficient and line sensitivity of the circuit were 7 ppm/degC and 20 ppm/V, respectively. The power supply rejection ratio (PSRR) was -45 dB at 100 Hz. The circuit consists of subthreshold MOSFETs with a low-power dissipation of 0.3 uW or less, and a 1.5-V power supply. Because the circuit generates a reference voltage based on threshold voltage of a MOSFET in an LSI chip, it can be used as an on-chip process monitoring circuit and a part of the on-chip process compensation circuit systems.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS / Voltage reference / Subthreshold region / Weak-inversion / deep triode region / Ultra-low power / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 253, ICD2008-68, pp. 55-60, Oct. 2008.
Paper # ICD2008-68 
Date of Issue 2008-10-15 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2008-68 Link to ES Tech. Rep. Archives: ICD2008-68

Conference Information
Committee ICD ITE-IST  
Conference Date 2008-10-22 - 2008-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2008-10-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An Ultra-low Power Voltage Reference consisting of Subthreshold MOSFETs 
Sub Title (in English)  
Keyword(1) CMOS  
Keyword(2) Voltage reference  
Keyword(3) Subthreshold region  
Keyword(4) Weak-inversion  
Keyword(5) deep triode region  
Keyword(6) Ultra-low power  
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Keyword(8)  
1st Author's Name Ken Ueno  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tetsuya Hirose  
2nd Author's Affiliation Kobe University (Kobe Univ.)
3rd Author's Name Tetsuya Asai  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Yoshihito Amemiya  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2008-10-22 17:30:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2008-68 
Volume (vol) vol.108 
Number (no) no.253 
Page pp.55-60 
#Pages
Date of Issue 2008-10-15 (ICD) 


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