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| Presentation | 2008-10-10 16:15 Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)  SDM2008-167 Link to ES Tech. Rep. Archives: SDM2008-167 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(100), Si(111), and Si(110) are reported. The data were obtained using synchrotron radiation which allowed the Si 2p, N 1s, and O 1s levels to be investigated with the same probing depth. The following main results were obtained: 1) The $Si_3$$N_4$ film is covered with one monolayer of Si-$(OH)_3$N. Its areal density is 15% smaller on Si(111) than on Si(100) and Si (110), 2) the $Si_3$$N_4$/Si interfaces on all three surfaces are compositionally abrupt. This conclusion is based on the observation that no Si atoms bonded with three N atoms and one Si atom were detected, 3) The observation that the number of Si-H bonds at the $Si_3$$N_4$/Si(110) interface is 38~53% larger than those at the $Si_3$$N_4$/Si(100) and $Si_3$$N_4$/Si(111) interfaces indicates a dependence of the interface structure on the orientation of the substrate. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon nitride film / nitrogen-hydrogen radical / Soft x-ray-excited angle-resolved photoemission / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 236, SDM2008-167, pp. 69-74, Oct. 2008. | |
| Paper # | SDM2008-167 | |
| Date of Issue | 2008-10-02 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-167 Link to ES Tech. Rep. Archives: SDM2008-167 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-10-09 - 2008-10-10 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and Novel Process Technologies |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | Silicon nitride film |
| Keyword(2) | nitrogen-hydrogen radical |
| Keyword(3) | Soft x-ray-excited angle-resolved photoemission |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tomoyuki Suwa |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Takashi Aratani |
| 2nd Author's Affiliation | Shin-Etsu Chemical Co., Ltd. (Shin-Etsu Chemi.) |
| 3rd Author's Name | Masaaki Higuchi |
| 3rd Author's Affiliation | Toshiba (Toshiba) |
| 4th Author's Name | Shigetoshi Sugawa |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Eiji Ikenaga |
| 5th Author's Affiliation | JASRI (JASRI) |
| 6th Author's Name | Jiro Ushio |
| 6th Author's Affiliation | Advanced Research Laboratory, Hitachi Ltd. (Hitachi) |
| 7th Author's Name | Hiroshi Nohira |
| 7th Author's Affiliation | Musashi Institute of Technology (Musashi Inst. of Tech.) |
| 8th Author's Name | Akinobu Teramoto |
| 8th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 9th Author's Name | Tadahiro Ohmi |
| 9th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 10th Author's Name | Takeo Hattori |
| 10th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-10-10 16:15:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2008-167 |
| Volume (vol) | vol.108 |
| Number (no) | no.236 |
| Page | pp.69-74 |
| #Pages | 6 |
| Date of Issue | 2008-10-02 (SDM) |
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