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| Presentation | 2008-08-28 14:20 K-band AlGaN/GaN-based MMICs on sapphire substrates Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL)  MW2008-85 Link to ES Tech. Rep. Archives: MW2008-85 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip lines with via-holes through chemically stable sapphire are successfully formed by using a novel laser drilling technique. Integrated AlGaN/GaN MIS-HFETs have in-situ SiN as a gate insulator, which is formed subsequently after the epitaxial growth without any exposure in the air. A typical MIS-HFET shows fmax of 203 GHz. The compact 3-stage amplifier exhibits a small-signal gain as high as 22 dB at 26 GHz with a 3 dB bandwidth of 4 GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN heterojunction FET / MMIC amplifiers / sapphire / via hole / laser drilling / microstrip line / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 195, MW2008-85, pp. 37-40, Aug. 2008. | |
| Paper # | MW2008-85 | |
| Date of Issue | 2008-08-21 (MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | MW2008-85 Link to ES Tech. Rep. Archives: MW2008-85 |
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| Conference Information | |
| Committee | MW |
| Conference Date | 2008-08-28 - 2008-08-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Osaka-Univ. (Toyonaka) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave Technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2008-08-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | K-band AlGaN/GaN-based MMICs on sapphire substrates |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN heterojunction FET |
| Keyword(2) | MMIC amplifiers |
| Keyword(3) | sapphire |
| Keyword(4) | via hole |
| Keyword(5) | laser drilling |
| Keyword(6) | microstrip line |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tomohiro Murata |
| 1st Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 2nd Author's Name | Masayuki Kuroda |
| 2nd Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 3rd Author's Name | Shuichi Nagai |
| 3rd Author's Affiliation | Panasonic Boston Laboratory (PBL) |
| 4th Author's Name | Masaaki Nishijima |
| 4th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 5th Author's Name | Hidetoshi Ishida |
| 5th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 6th Author's Name | Manabu Yanagihara |
| 6th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 7th Author's Name | Tetsuzo Ueda |
| 7th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 8th Author's Name | Hiroyuki Sakai |
| 8th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 9th Author's Name | Tsuyoshi Tanaka |
| 9th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (Matsushita) |
| 10th Author's Name | Ming Li |
| 10th Author's Affiliation | Panasonic Boston Laboratory (PBL) |
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| Speaker | Author-1 |
| Date Time | 2008-08-28 14:20:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | MW2008-85 |
| Volume (vol) | vol.108 |
| Number (no) | no.195 |
| Page | pp.37-40 |
| #Pages | 4 |
| Date of Issue | 2008-08-21 (MW) |
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