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Paper Abstract and Keywords
Presentation 2008-08-04 14:00
Development of Surface-Wave Plasma Generation Apparatus and Application to Semiconductor Processing
Hisashi Fukuda (Muroran Inst. Technol.), Masakazu Furukawa (ARIC) CPM2008-41 Link to ES Tech. Rep. Archives: CPM2008-41
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed a high-density surface-wave plasma apparatus for the application to next generation semiconductor fabrication processing. In this study, silicon nitride films (Si3N4 films) were deposited below 300℃ and the film composition were evaluated in the view of their electronic device application. The Si3N4 films showed the water vapor transmission rate (WVTR) of 0.083g/m2・day applicable to device coating film. The Si3N4 films indicated low leakage current below 1.0×10-9 A to realize a microdisplay application.
Keyword (in Japanese) (See Japanese page) 
(in English) Chemical Vapor Deposition / Surface-wave Plasma / Silicon Nitride Film / Display Passivation / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 178, CPM2008-41, pp. 1-4, Aug. 2008.
Paper # CPM2008-41 
Date of Issue 2008-07-28 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2008-41 Link to ES Tech. Rep. Archives: CPM2008-41

Conference Information
Committee CPM  
Conference Date 2008-08-04 - 2008-08-04 
Place (in Japanese) (See Japanese page) 
Place (in English) Muroran Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Electronic Component Parts and Materials, etc. 
Paper Information
Registration To CPM 
Conference Code 2008-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Surface-Wave Plasma Generation Apparatus and Application to Semiconductor Processing 
Sub Title (in English)  
Keyword(1) Chemical Vapor Deposition  
Keyword(2) Surface-wave Plasma  
Keyword(3) Silicon Nitride Film  
Keyword(4) Display Passivation  
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1st Author's Name Hisashi Fukuda  
1st Author's Affiliation Muroran Institute of Technology (Muroran Inst. Technol.)
2nd Author's Name Masakazu Furukawa  
2nd Author's Affiliation Aries Research (ARIC)
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Speaker Author-1 
Date Time 2008-08-04 14:00:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2008-41 
Volume (vol) vol.108 
Number (no) no.178 
Page pp.1-4 
#Pages
Date of Issue 2008-07-28 (CPM) 


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