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Paper Abstract and Keywords
Presentation 2008-07-18 15:05
Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL
Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57 Link to ES Tech. Rep. Archives: SDM2008-147 ICD2008-57
Abstract (in Japanese) (See Japanese page) 
(in English) We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge generation and its impact on the device performance. Moderate Metal Gate / High-K dielectric (MG/HK) interface reaction is found to be a dominant factor to improve device performance. By optimizing TaCx composition, fixed charge free TaCx/HfSiON device is successfully fabricated. Also, we have demonstrated that the strain effect in deeply scaled devices can be enhanced by eliminating the fixed charges in HfSiON, for the first time. Utilizing Stress Memorization Technique (SMT) and Stress Liner (SL), Lg=35nm high performance TaCx/HfSiON devices is achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) Metal Gate / High-k / TaC / HfSiON / MOSFET / SMT / Stress Liner /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 139, SDM2008-147, pp. 109-114, July 2008.
Paper # SDM2008-147 
Date of Issue 2008-07-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF SDM2008-147 ICD2008-57 Link to ES Tech. Rep. Archives: SDM2008-147 ICD2008-57

Conference Information
Committee ICD SDM  
Conference Date 2008-07-17 - 2008-07-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2008-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL 
Sub Title (in English)  
Keyword(1) Metal Gate  
Keyword(2) High-k  
Keyword(3) TaC  
Keyword(4) HfSiON  
Keyword(5) MOSFET  
Keyword(6) SMT  
Keyword(7) Stress Liner  
Keyword(8)  
1st Author's Name Masakazu Goto  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Kosuke Tatsumura  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Shigeru Kawanaka  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Kazuaki Nakajima  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Reika Ichihara  
5th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
6th Author's Name Yasuhito Yoshimizu  
6th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
7th Author's Name Hiroyuki Onoda  
7th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
8th Author's Name Koji Nagatomo  
8th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
9th Author's Name Toshiyuki Sasaki  
9th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
10th Author's Name Takashi Fukushima  
10th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
11th Author's Name Akiko Nomachi  
11th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
12th Author's Name Seiji Inumiya  
12th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
13th Author's Name Tomonori Aoyama  
13th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
14th Author's Name Masato Koyama  
14th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
15th Author's Name Yoshiaki Toyoshima  
15th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker
Date Time 2008-07-18 15:05:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2008-147,IEICE-ICD2008-57 
Volume (vol) IEICE-108 
Number (no) no.139(SDM), no.140(ICD) 
Page pp.109-114 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2008-07-10,IEICE-ICD-2008-07-10 


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