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| Presentation | 2008-07-18 14:40 Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete)  SDM2008-146 ICD2008-56 Link to ES Tech. Rep. Archives: SDM2008-146 ICD2008-56 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ) fabrication: flexibly-shaped-pulse flash lamp annealing (FSP-FLA). The conventional FLA treatment on metal/high-k device degrades its effective electron mobility and bias temperature instability (BTI) characteristics. A recovery annealing treatment after FLA is most effective to recover those degradations. However, the annealing after dopant activation causes deactivation and diffusion. The FSP-FLA allowed us sub-10-milli-second annealing after activation FLA; it realizes high BTI reliability and high mobility without deactivation and diffusion. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | FLA / USJ / Metal Gate / High-k / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 139, SDM2008-146, pp. 103-108, July 2008. | |
| Paper # | SDM2008-146 | |
| Date of Issue | 2008-07-10 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-146 ICD2008-56 Link to ES Tech. Rep. Archives: SDM2008-146 ICD2008-56 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2008-07-17 - 2008-07-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-07-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology |
| Sub Title (in English) | |
| Keyword(1) | FLA |
| Keyword(2) | USJ |
| Keyword(3) | Metal Gate |
| Keyword(4) | High-k |
| Keyword(5) | |
| Keyword(6) | |
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| 1st Author's Name | Takashi Onizawa |
| 1st Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. (selete) |
| 2nd Author's Name | Shinichi Kato |
| 2nd Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. (selete) |
| 3rd Author's Name | Takayuki Aoyama |
| 3rd Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. (selete) |
| 4th Author's Name | Yasuo Nara |
| 4th Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. (selete) |
| 5th Author's Name | Yuzuru Ohji |
| 5th Author's Affiliation | Semiconductor Leading Edge Technologies, Inc. (selete) |
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| Speaker | Author-1 |
| Date Time | 2008-07-18 14:40:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-146, ICD2008-56 |
| Volume (vol) | vol.108 |
| Number (no) | no.139(SDM), no.140(ICD) |
| Page | pp.103-108 |
| #Pages | 6 |
| Date of Issue | 2008-07-10 (SDM, ICD) |
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