Paper Abstract and Keywords |
Presentation |
2008-07-17 09:00
Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations Motoyuki Sato, Yoshihiro Sugita, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (Selete) SDM2008-128 ICD2008-38 Link to ES Tech. Rep. Archives: SDM2008-128 ICD2008-38 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Using (110) substarate is one of promissing candidate for pMOSTET boost technology. (110) surface shows not only higher interface defect density between Si substrate and oxide but also different nature diffect condtion
(Pb center) compared to (100) surface. Both Pb0 and Pb1 defect exist on (100), on the other hand, only Pb0 defect was obserbed on (110) surface. Based on this differenet nature of interface defect, NBTI on (110) is better than that on (100). On the other hand, 1/f noise on (110) much larger than that on (100). These phenomena can be explained with the physical characteristics difference between Pb0 and Pb1. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
NBTI / 1/f noise / (110) substrate / Pb center / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 139, SDM2008-128, pp. 1-6, July 2008. |
Paper # |
SDM2008-128 |
Date of Issue |
2008-07-10 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2008-128 ICD2008-38 Link to ES Tech. Rep. Archives: SDM2008-128 ICD2008-38 |
Conference Information |
Committee |
ICD SDM |
Conference Date |
2008-07-17 - 2008-07-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-ICD-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Impact of the Different Nature of Interface Defect States on the NBTI and 1/f noise of High-k / Metal Gate pMOSFETs between (100) and (110) Crystal Orientations |
Sub Title (in English) |
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Keyword(1) |
NBTI |
Keyword(2) |
1/f noise |
Keyword(3) |
(110) substrate |
Keyword(4) |
Pb center |
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1st Author's Name |
Motoyuki Sato |
1st Author's Affiliation |
Semiconductor Leading Edge Technologies Inc. (Selete) |
2nd Author's Name |
Yoshihiro Sugita |
2nd Author's Affiliation |
Semiconductor Leading Edge Technologies Inc. (Selete) |
3rd Author's Name |
Takayuki Aoyama |
3rd Author's Affiliation |
Semiconductor Leading Edge Technologies Inc. (Selete) |
4th Author's Name |
Yasuo Nara |
4th Author's Affiliation |
Semiconductor Leading Edge Technologies Inc. (Selete) |
5th Author's Name |
Yuzuru Ohji |
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Semiconductor Leading Edge Technologies Inc. (Selete) |
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Speaker |
Author-1 |
Date Time |
2008-07-17 09:00:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-128, ICD2008-38 |
Volume (vol) |
vol.108 |
Number (no) |
no.139(SDM), no.140(ICD) |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2008-07-10 (SDM, ICD) |
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