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Paper Abstract and Keywords
Presentation 2008-07-17 15:55
Co-design of CNT based devices and circuitry -- How can CNT-based circuit overcome Si-CMOS? --
Shinobu Fujita (Toshiba RDC) SDM2008-138 ICD2008-48 Link to ES Tech. Rep. Archives: SDM2008-138 ICD2008-48
Abstract (in Japanese) (See Japanese page) 
(in English) Emerging devices using new materials (post-Si) are expected to replace Si-based MOSFET in future. This paper firstly clarifies carbon-nanotube (CNT) is the most promising candidate for it by analyzing based on “co-design” of future CMOS. Also, this paper assesses requirement for two kinds of CNT-based devices, FETs (CNFET) and nano-electromechanical-switches (NEMS), to be beyond Si based CMOS performance of some circuits.
Keyword (in Japanese) (See Japanese page) 
(in English) Carbon nanotube / CNT / CNFET / NEMS / post-Si / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 140, ICD2008-48, pp. 59-64, July 2008.
Paper # ICD2008-48 
Date of Issue 2008-07-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-138 ICD2008-48 Link to ES Tech. Rep. Archives: SDM2008-138 ICD2008-48

Conference Information
Committee ICD SDM  
Conference Date 2008-07-17 - 2008-07-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2008-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Co-design of CNT based devices and circuitry 
Sub Title (in English) How can CNT-based circuit overcome Si-CMOS? 
Keyword(1) Carbon nanotube  
Keyword(2) CNT  
Keyword(3) CNFET  
Keyword(4) NEMS  
Keyword(5) post-Si  
1st Author's Name Shinobu Fujita  
1st Author's Affiliation Toshiba R&D Center (Toshiba RDC)
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Date Time 2008-07-17 15:55:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-SDM2008-138,IEICE-ICD2008-48 
Volume (vol) IEICE-108 
Number (no) no.139(SDM), no.140(ICD) 
Page pp.59-64 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2008-07-10,IEICE-ICD-2008-07-10 

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