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| Presentation | 2008-07-17 15:55 Co-design of CNT based devices and circuitry -- How can CNT-based circuit overcome Si-CMOS? -- Shinobu Fujita (Toshiba RDC)  SDM2008-138 ICD2008-48 Link to ES Tech. Rep. Archives: SDM2008-138 ICD2008-48 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Emerging devices using new materials (post-Si) are expected to replace Si-based MOSFET in future. This paper firstly clarifies carbon-nanotube (CNT) is the most promising candidate for it by analyzing based on “co-design” of future CMOS. Also, this paper assesses requirement for two kinds of CNT-based devices, FETs (CNFET) and nano-electromechanical-switches (NEMS), to be beyond Si based CMOS performance of some circuits. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Carbon nanotube / CNT / CNFET / NEMS / post-Si / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 140, ICD2008-48, pp. 59-64, July 2008. | |
| Paper # | ICD2008-48 | |
| Date of Issue | 2008-07-10 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-138 ICD2008-48 Link to ES Tech. Rep. Archives: SDM2008-138 ICD2008-48 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2008-07-17 - 2008-07-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ICD |
| Conference Code | 2008-07-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Co-design of CNT based devices and circuitry |
| Sub Title (in English) | How can CNT-based circuit overcome Si-CMOS? |
| Keyword(1) | Carbon nanotube |
| Keyword(2) | CNT |
| Keyword(3) | CNFET |
| Keyword(4) | NEMS |
| Keyword(5) | post-Si |
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| 1st Author's Name | Shinobu Fujita |
| 1st Author's Affiliation | Toshiba R&D Center (Toshiba RDC) |
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| Speaker | 1 |
| Date Time | 2008-07-17 15:55:00 |
| Presentation Time | 25 |
| Registration for | ICD |
| Paper # | IEICE-SDM2008-138,IEICE-ICD2008-48 |
| Volume (vol) | IEICE-108 |
| Number (no) | no.139(SDM), no.140(ICD) |
| Page | pp.59-64 |
| #Pages | IEICE-6 |
| Date of Issue | IEICE-SDM-2008-07-10,IEICE-ICD-2008-07-10 |
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