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| Presentation | 2008-07-11 13:35 Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 Hirotaka Kaku, Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)  ED2008-90 SDM2008-109 Link to ES Tech. Rep. Archives: ED2008-90 SDM2008-109 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Formation of highly crystallized Ge films on quartz substrate from VHF-ICP of GeH4 and electrical properties of the films have been investigated. From the Hall measurements, we found that the films show p-type conduction and that carrier concentrations for the films of 92 and 98% in the crystallinity are 2.9 e19 and 5.7 e18cm-3, respectively. In addition, we observed a carrier mobility of 22cm2/Vs for the film with 98% crystallinity, which is ~2 times higher compared to 12cm2/Vs of 92% case. This result suggests that defects in the films play a role on carrier type and transport properties. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge / VHF / carrier concentration / defect / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 122, SDM2008-109, pp. 271-274, July 2008. | |
| Paper # | SDM2008-109 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-90 SDM2008-109 Link to ES Tech. Rep. Archives: ED2008-90 SDM2008-109 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-07-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 |
| Sub Title (in English) | |
| Keyword(1) | Ge |
| Keyword(2) | VHF |
| Keyword(3) | carrier concentration |
| Keyword(4) | defect |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Hirotaka Kaku |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Katsunori Makihara |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Mitsuhisa Ikeda |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Seiichiro Higashi |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Seiichi Miyazaki |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-07-11 13:35:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2008-90, SDM2008-109 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.271-274 |
| #Pages | 4 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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