講演抄録/キーワード |
講演名 |
2008-07-11 13:35
Electrical Properties of Highly Crystallized Ge:H Thin Films Grown from VHF Inductively-Coupled Plasma of H2-diluted GeH4 ○Hirotaka Kaku・Katsunori Makihara・Mitsuhisa Ikeda・Seiichiro Higashi・Seiichi Miyazaki(Hiroshima Univ.) ED2008-90 SDM2008-109 エレソ技報アーカイブへのリンク:ED2008-90 SDM2008-109 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
Formation of highly crystallized Ge films on quartz substrate from VHF-ICP of GeH4 and electrical properties of the films have been investigated. From the Hall measurements, we found that the films show p-type conduction and that carrier concentrations for the films of 92 and 98% in the crystallinity are 2.9 e19 and 5.7 e18cm-3, respectively. In addition, we observed a carrier mobility of 22cm2/Vs for the film with 98% crystallinity, which is ~2 times higher compared to 12cm2/Vs of 92% case. This result suggests that defects in the films play a role on carrier type and transport properties. |
キーワード |
(和) |
/ / / / / / / |
(英) |
Ge / VHF / carrier concentration / defect / / / / |
文献情報 |
信学技報, vol. 108, no. 122, SDM2008-109, pp. 271-274, 2008年7月. |
資料番号 |
SDM2008-109 |
発行日 |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2008-90 SDM2008-109 エレソ技報アーカイブへのリンク:ED2008-90 SDM2008-109 |
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