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| Presentation | 2008-07-11 15:35 Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura (Nagoya Inst. of Tech.)  ED2008-108 SDM2008-127 Link to ES Tech. Rep. Archives: ED2008-108 SDM2008-127 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | 4H-SiC Schottky diodes are promising devices for the application of high-power and high-frequency rectifiers．However it has been reported that the forward bias property of 4H-SiC Schottky diodes is not uniform among the fabricated diodes because of inhomogeneity of the Schottky barrier height. In this study, we observed regions with a low Schottky barrier height on 4H-SiC surface by the electrochemical deposition of ZnO. Then we fabricated Ni Schottky diodes after ZnO removal to clarify regions with the low Schottky barrier height, and we compared the Schottky barrier height between the contacts on regions with and without ZnO deposition. Schottky barrier heights of the contacts covering a ZnO deposited area were lower than the contacts without a ZnO deposited area. The molten salt etching revealed that most of the ZnO films were deposited on the position with etch pits, but a part of films were deposited on positions without an etch pit. The regions with low Schottky barrier height originate from not only etch pit defect but also other kinds of defects. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | 4H-SiC / Schottky barrier height / defect / electrochemical deposition / ZnO / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 122, SDM2008-127, pp. 357-361, July 2008. | |
| Paper # | SDM2008-127 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-108 SDM2008-127 Link to ES Tech. Rep. Archives: ED2008-108 SDM2008-127 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-07-SDM-ED |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition |
| Sub Title (in English) | |
| Keyword(1) | 4H-SiC |
| Keyword(2) | Schottky barrier height |
| Keyword(3) | defect |
| Keyword(4) | electrochemical deposition |
| Keyword(5) | ZnO |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masashi Kato |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name | Hidenori Ono |
| 2nd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 3rd Author's Name | Kazuya Ogawa |
| 3rd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 4th Author's Name | Masaya Ichimura |
| 4th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2008-07-11 15:35:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2008-108, SDM2008-127 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.357-361 |
| #Pages | 5 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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