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| Presentation | 2008-07-11 15:05 Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion Takeshi Kimura, Tamotsu Hashizume (Hokkaido Univ.)  ED2008-106 SDM2008-125 Link to ES Tech. Rep. Archives: ED2008-106 SDM2008-125 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A SiNx/GaN structure was prepared by ECR-CVD, and annealed at 1000 oC for 2 hours in N2 ambient. An XPS result showed the outdiffusion of Ga atom to the SiNx layer during the high-temperature annealing. This could induce deep levels associated with Ga vacancy near the GaN surface, leading to the decrease in the forward current of Schottky diode, in particular at the bias larger than +0.5V. A SiNx/CNx/GaN structure was also prepared by ECR-CVD, and annealed in the same condition to diffuse carbon into GaN. An XPS result showed the existence of high-density carbon atoms in the GaN surface. I-V characteristics of Schottky diode showed the drastic increase in current in both forward and reverse regions after the carbon diffusion. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / CNx / SiNx / ECR-CVD / high-temperature annealing / Ga outdiffusion / carbon diffusion / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 121, ED2008-106, pp. 347-350, July 2008. | |
| Paper # | ED2008-106 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-106 SDM2008-125 Link to ES Tech. Rep. Archives: ED2008-106 SDM2008-125 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-07-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of GaN Surfaces After High-Temperature Annealing and Carbon Diffusion |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | CNx |
| Keyword(3) | SiNx |
| Keyword(4) | ECR-CVD |
| Keyword(5) | high-temperature annealing |
| Keyword(6) | Ga outdiffusion |
| Keyword(7) | carbon diffusion |
| Keyword(8) | |
| 1st Author's Name | Takeshi Kimura |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Tamotsu Hashizume |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-07-11 15:05:00 |
| Presentation Time | 15 minutes |
| Registration for | ED |
| Paper # | ED2008-106, SDM2008-125 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.347-350 |
| #Pages | 4 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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