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| Presentation | 2008-07-11 14:05 Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes M. R. Kim, S. D. Lee, J. S. Lee, N. S. Kwak, S. D. Kim, J. K. Rhee (Dongguk Univ.), W. J. Kim (ADD)  ED2008-100 SDM2008-119 Link to ES Tech. Rep. Archives: ED2008-100 SDM2008-119 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We examined the heat dissipation and the nature of the negative-differential-resistance for GaAs Gunn diodes in a vertical device structure and a planar structure. In the vertical structure we designed and fabricated the Gunn diodes taking into consideration the effective heat dissipation through integral heat sink and sufficient wafer thinning for the standard Gunn diode packaging. Size of circular anode varies from 42−70 ・ in diameter. In the standard integral heat sink technique, the substrate was thinned to a thickness of 10−13 ・ after forming the heat sink. In the planar structure, the anode was situated inside the cathode for modular packaging of the flip-chip bonding. We compared the results for the negative-differential-resistance in the planar structure with the vertical one and discussed the heat dissipation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaAs Gunn Diode / Negative-Differential-Resistance / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 122, SDM2008-119, pp. 317-320, July 2008. | |
| Paper # | SDM2008-119 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-100 SDM2008-119 Link to ES Tech. Rep. Archives: ED2008-100 SDM2008-119 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-07-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Heat Dissipation and the Nature of Negative-Differential-Resistance for GaAs Gunn Diodes |
| Sub Title (in English) | |
| Keyword(1) | GaAs Gunn Diode |
| Keyword(2) | Negative-Differential-Resistance |
| Keyword(3) | |
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| 1st Author's Name | M. R. Kim |
| 1st Author's Affiliation | Dongguk University (Dongguk Univ.) |
| 2nd Author's Name | S. D. Lee |
| 2nd Author's Affiliation | Dongguk University (Dongguk Univ.) |
| 3rd Author's Name | J. S. Lee |
| 3rd Author's Affiliation | Dongguk University (Dongguk Univ.) |
| 4th Author's Name | N. S. Kwak |
| 4th Author's Affiliation | Dongguk University (Dongguk Univ.) |
| 5th Author's Name | S. D. Kim |
| 5th Author's Affiliation | Dongguk University (Dongguk Univ.) |
| 6th Author's Name | J. K. Rhee |
| 6th Author's Affiliation | Dongguk University (Dongguk Univ.) |
| 7th Author's Name | W. J. Kim |
| 7th Author's Affiliation | Agency for Defense Deevelopment (ADD) |
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| Speaker | Author-1 |
| Date Time | 2008-07-11 14:05:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2008-100, SDM2008-119 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.317-320 |
| #Pages | 4 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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