講演抄録/キーワード |
講演名 |
2008-07-11 15:05
24 GHz Low Noise Amplifier Design in 65 nm CMOS Technology with Inter-Stage Matching Optimization ○Ickhyun Song・Hakchul Jung・Hee-Sauk Jhon・Minsuk Koo・Hyungcheol Shin(Seoul National Univ.) ED2008-96 SDM2008-115 エレソ技報アーカイブへのリンク:ED2008-96 SDM2008-115 |
抄録 |
(和) |
2-stage 24 GHz low noise amplifier (LNA) was designed using 65 nm RF CMOS technology. Since conventional topology with inductive source degeneration provides lower signal gain at 24 GHz, a source inductor is eliminated and therefore, modified structure in which a shunt inductor was used for input matching is adopted. Figure of merit (FoM) which includes gain, noise figure, and power consumption was used as a design criterion and was maximized considering various circuit parameters such as transistor channel width of each stage, inductor structure and gate bias voltages. Also, the effect of inter-stage impedance on FoM was analyzed. And for noise simulation, accurate channel thermal noise model was used. Through these steps, FoM of 2-stage LNA was optimized. |
(英) |
2-stage 24 GHz low noise amplifier (LNA) was designed using 65 nm RF CMOS technology. Since conventional topology with inductive source degeneration provides lower signal gain at 24 GHz, a source inductor is eliminated and therefore, modified structure in which a shunt inductor was used for input matching is adopted. Figure of merit (FoM) which includes gain, noise figure, and power consumption was used as a design criterion and was maximized considering various circuit parameters such as transistor channel width of each stage, inductor structure and gate bias voltages. Also, the effect of inter-stage impedance on FoM was analyzed. And for noise simulation, accurate channel thermal noise model was used. Through these steps, FoM of 2-stage LNA was optimized. |
キーワード |
(和) |
Low noise amplifier / CMOS / Figure of merit / Inter-stage impedance / Noise figure / / / |
(英) |
Low noise amplifier / CMOS / Figure of merit / Inter-stage impedance / Noise figure / / / |
文献情報 |
信学技報, vol. 108, no. 122, SDM2008-115, pp. 301-304, 2008年7月. |
資料番号 |
SDM2008-115 |
発行日 |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2008-96 SDM2008-115 エレソ技報アーカイブへのリンク:ED2008-96 SDM2008-115 |
|