講演抄録/キーワード |
講演名 |
2008-07-10 09:45
Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure ○Sang-Su Park・Se Woong Oh・Kyeong Rok Kim・Hyun Joo Kim・Tae Whan Kim・Kae Dal Kwack(Hanyang Univ.) ED2008-57 SDM2008-76 エレソ技報アーカイブへのリンク:ED2008-57 SDM2008-76 |
抄録 |
(和) |
Unique two-bit/cell SONOS devices separated from the ONOs utilizing an advanced saddle structure with the separated gates, denoted by the advanced saddle SONOS (AS-SONOS) devices, were designed to increase storage density of the memory devices. The decrease in the charge distribution profile and the increase in the data retention time of the SONOS device were achieved due to the formation of the divided storage nitride layer. The program and the erase characteristics of the Fowler-Nordheim tunneling processes were estimated to verify unique two-bit/cell SONOS devices. The memory density, the reading speed, and the programming speeds of the proposed two-bit/cell SONOS increased due to an increase in the captured charge of the SONOS cell. These results indicate that the two-bit/cell SONOS devices designed by using the advanced saddle structure hold promise for potential applications in high-density nonvolatile memory devices. |
(英) |
Unique two-bit/cell SONOS devices separated from the ONOs utilizing an advanced saddle structure with the separated gates, denoted by the advanced saddle SONOS (AS-SONOS) devices, were designed to increase storage density of the memory devices. The decrease in the charge distribution profile and the increase in the data retention time of the SONOS device were achieved due to the formation of the divided storage nitride layer. The program and the erase characteristics of the Fowler-Nordheim tunneling processes were estimated to verify unique two-bit/cell SONOS devices. The memory density, the reading speed, and the programming speeds of the proposed two-bit/cell SONOS increased due to an increase in the captured charge of the SONOS cell. These results indicate that the two-bit/cell SONOS devices designed by using the advanced saddle structure hold promise for potential applications in high-density nonvolatile memory devices. |
キーワード |
(和) |
SONOS / advanced saddle / two-bit/cell / storage density / / / / |
(英) |
SONOS / advanced saddle / two-bit/cell / storage density / / / / |
文献情報 |
信学技報, vol. 108, no. 122, SDM2008-76, pp. 89-93, 2008年7月. |
資料番号 |
SDM2008-76 |
発行日 |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2008-57 SDM2008-76 エレソ技報アーカイブへのリンク:ED2008-57 SDM2008-76 |