Paper Abstract and Keywords |
Presentation |
2008-07-09 12:05
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61 Link to ES Tech. Rep. Archives: ED2008-42 SDM2008-61 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethylaluminum (TMA)precursor and oxygen radicals in the temperature range of 25「ヲ500 。ノ. Growth rate per cycle was varied with substrate temperature from 1.8 。ハ/cycle at 25 。ノ to 0.8 。ハ/cycle at 500 。ノ. Excellent electrical properties of GaN MIS capacitor were obtained at 300。ノ, in terms of low electrical leakage current density (~ 10-10 A/cm2 at 1MV) at room temperature, high dielectric constant of 8.6 with the thinner oxide thickness of 12nm. Interface trap density (Dit) was estimated using high Frequency C-V method at 300 。ノ. These results show that RPALD technique is an excellent choice to deposit high quality Al2O3 as a gate dielectric in GaN based devices. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Remote Plasma Atomic Layer Deposition (RPALD) / TMA / Aluminum oxide / GaN MIS capacitor / Interface trap density / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 122, SDM2008-61, pp. 15-19, July 2008. |
Paper # |
SDM2008-61 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2008-42 SDM2008-61 Link to ES Tech. Rep. Archives: ED2008-42 SDM2008-61 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2008-07-09 - 2008-07-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kaderu2・7 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition |
Sub Title (in English) |
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Keyword(1) |
Remote Plasma Atomic Layer Deposition (RPALD) |
Keyword(2) |
TMA |
Keyword(3) |
Aluminum oxide |
Keyword(4) |
GaN MIS capacitor |
Keyword(5) |
Interface trap density |
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Keyword(7) |
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1st Author's Name |
Hyeong-Seon Yun |
1st Author's Affiliation |
Cheongju University (Cheongju Univ.) |
2nd Author's Name |
Ka-Lam Kim |
2nd Author's Affiliation |
Cheongju University (Cheongju Univ.) |
3rd Author's Name |
No-Won Kwak |
3rd Author's Affiliation |
Cheongju University (Cheongju Univ.) |
4th Author's Name |
Woo-Seok Lee |
4th Author's Affiliation |
Cheongju University (Cheongju Univ.) |
5th Author's Name |
Sang-Hyun Jeong |
5th Author's Affiliation |
Cheongju University (Cheongju Univ.) |
6th Author's Name |
Ju-Ok Seo |
6th Author's Affiliation |
Itswell Co. Ltd (Itswell) |
7th Author's Name |
Kwang-Ho Kim |
7th Author's Affiliation |
Cheongju University (Cheongju Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-07-09 12:05:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
ED2008-42, SDM2008-61 |
Volume (vol) |
vol.108 |
Number (no) |
no.121(ED), no.122(SDM) |
Page |
pp.15-19 |
#Pages |
5 |
Date of Issue |
2008-07-02 (ED, SDM) |
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