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Paper Abstract and Keywords
Presentation 2008-07-09 12:05
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition
Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61 Link to ES Tech. Rep. Archives: ED2008-42 SDM2008-61
Abstract (in Japanese) (See Japanese page) 
(in English) Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethylaluminum (TMA)precursor and oxygen radicals in the temperature range of 25「ヲ500 。ノ. Growth rate per cycle was varied with substrate temperature from 1.8 。ハ/cycle at 25 。ノ to 0.8 。ハ/cycle at 500 。ノ. Excellent electrical properties of GaN MIS capacitor were obtained at 300。ノ, in terms of low electrical leakage current density (~ 10-10 A/cm2 at 1MV) at room temperature, high dielectric constant of 8.6 with the thinner oxide thickness of 12nm. Interface trap density (Dit) was estimated using high Frequency C-V method at 300 。ノ. These results show that RPALD technique is an excellent choice to deposit high quality Al2O3 as a gate dielectric in GaN based devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Remote Plasma Atomic Layer Deposition (RPALD) / TMA / Aluminum oxide / GaN MIS capacitor / Interface trap density / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-61, pp. 15-19, July 2008.
Paper # SDM2008-61 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2008-42 SDM2008-61 Link to ES Tech. Rep. Archives: ED2008-42 SDM2008-61

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition 
Sub Title (in English)  
Keyword(1) Remote Plasma Atomic Layer Deposition (RPALD)  
Keyword(2) TMA  
Keyword(3) Aluminum oxide  
Keyword(4) GaN MIS capacitor  
Keyword(5) Interface trap density  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hyeong-Seon Yun  
1st Author's Affiliation Cheongju University (Cheongju Univ.)
2nd Author's Name Ka-Lam Kim  
2nd Author's Affiliation Cheongju University (Cheongju Univ.)
3rd Author's Name No-Won Kwak  
3rd Author's Affiliation Cheongju University (Cheongju Univ.)
4th Author's Name Woo-Seok Lee  
4th Author's Affiliation Cheongju University (Cheongju Univ.)
5th Author's Name Sang-Hyun Jeong  
5th Author's Affiliation Cheongju University (Cheongju Univ.)
6th Author's Name Ju-Ok Seo  
6th Author's Affiliation Itswell Co. Ltd (Itswell)
7th Author's Name Kwang-Ho Kim  
7th Author's Affiliation Cheongju University (Cheongju Univ.)
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Speaker Author-1 
Date Time 2008-07-09 12:05:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-42, SDM2008-61 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.15-19 
#Pages
Date of Issue 2008-07-02 (ED, SDM) 


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