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Paper Abstract and Keywords
Presentation 2008-07-09 14:35
[Invited Talk] High-K Dielectric for Charge Trap-type Flash Memory Application
Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore) ED2008-46 SDM2008-65 Link to ES Tech. Rep. Archives: ED2008-46 SDM2008-65
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, lanthanide group oxides, AlLaOx, HfLaOx, Gd2O3 and GdAlO3, used as blocking oxide in charge trap - type Flash memory devices have been studied. The ALD process for AlLaOx and HfLaOx with high deposition rate, good uniformity and self-limiting behavior were successfully developed. The charge trap memory with AlLaOx and HfLaOx as blocking layer demonstrates much faster operation speed but comparable (AlLaOx) or worse (HfLaOx) retention, compared to Al2O3 blocking layer control sample. Another group of high-・ materials, Gd2O3-based dielectric, used as the blocking oxide demonstrates enhanced operation speed. Incorporation of Al into Gd2O3 improves the retention further, which is an attractive candidate for blocking layer in charge trap – type Flash memory devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Flash memory / ALD / High-K dielectric / charge trap / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-65, pp. 37-41, July 2008.
Paper # SDM2008-65 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2008-46 SDM2008-65 Link to ES Tech. Rep. Archives: ED2008-46 SDM2008-65

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-K Dielectric for Charge Trap-type Flash Memory Application 
Sub Title (in English)  
Keyword(1) Flash memory  
Keyword(2) ALD  
Keyword(3) High-K dielectric  
Keyword(4) charge trap  
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1st Author's Name Byung-Jin Cho  
1st Author's Affiliation Korea Advanced Institute of Science and Technology (KAIST)
2nd Author's Name Wei He  
2nd Author's Affiliation National University of Singapore (National Univ. of Singapore)
3rd Author's Name Jing Pu  
3rd Author's Affiliation National University of Singapore (National Univ. of Singapore)
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Speaker Author-1 
Date Time 2008-07-09 14:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2008-46, SDM2008-65 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.37-41 
#Pages
Date of Issue 2008-07-02 (ED, SDM) 


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