Paper Abstract and Keywords |
Presentation |
2008-07-09 13:45
[Invited Talk]
Precise Ion Implantation for Advanced MOS LSIs Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63 Link to ES Tech. Rep. Archives: ED2008-44 SDM2008-63 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted impurities will directly influence the device performance and yield. The importance of precise control of the incident angle of ion beam is discussed; the poor precision results in the deviation of Vth and Idsat and asymmetry of them. Next, the effect of energy contamination caused by the deceleration of ions in front of a substrate (in order to obtain high beam current at low energy) on device characteristics is presented. Provisions in ion implanters for these issues are referred briefly. Defect generation during implantation and the impacts of the defects on the advanced device characteristics are also addressed. It is demonstrated that the amount of point defects is influenced by the implantation conditions and method, and the amount influences the redistribution of implanted impurities and activation during annealing. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Implantation / Incident beam angle / Energy contamination / Point defect generation / Device characteristics / Advanced MOSLSIs / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 122, SDM2008-63, pp. 25-30, July 2008. |
Paper # |
SDM2008-63 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-44 SDM2008-63 Link to ES Tech. Rep. Archives: ED2008-44 SDM2008-63 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2008-07-09 - 2008-07-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kaderu2・7 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Precise Ion Implantation for Advanced MOS LSIs |
Sub Title (in English) |
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Implantation |
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Incident beam angle |
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Energy contamination |
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Point defect generation |
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Device characteristics |
Keyword(6) |
Advanced MOSLSIs |
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1st Author's Name |
Toshiharu Suzuki |
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SEN Corporation an SHI and Axcelis Company (SEN) |
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Speaker |
Author-1 |
Date Time |
2008-07-09 13:45:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2008-44, SDM2008-63 |
Volume (vol) |
vol.108 |
Number (no) |
no.121(ED), no.122(SDM) |
Page |
pp.25-30 |
#Pages |
6 |
Date of Issue |
2008-07-02 (ED, SDM) |
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