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Paper Abstract and Keywords
Presentation 2008-07-09 13:45
[Invited Talk] Precise Ion Implantation for Advanced MOS LSIs
Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63 Link to ES Tech. Rep. Archives: ED2008-44 SDM2008-63
Abstract (in Japanese) (See Japanese page) 
(in English) Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted impurities will directly influence the device performance and yield. The importance of precise control of the incident angle of ion beam is discussed; the poor precision results in the deviation of Vth and Idsat and asymmetry of them. Next, the effect of energy contamination caused by the deceleration of ions in front of a substrate (in order to obtain high beam current at low energy) on device characteristics is presented. Provisions in ion implanters for these issues are referred briefly. Defect generation during implantation and the impacts of the defects on the advanced device characteristics are also addressed. It is demonstrated that the amount of point defects is influenced by the implantation conditions and method, and the amount influences the redistribution of implanted impurities and activation during annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) Implantation / Incident beam angle / Energy contamination / Point defect generation / Device characteristics / Advanced MOSLSIs / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-63, pp. 25-30, July 2008.
Paper # SDM2008-63 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF ED2008-44 SDM2008-63 Link to ES Tech. Rep. Archives: ED2008-44 SDM2008-63

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Precise Ion Implantation for Advanced MOS LSIs 
Sub Title (in English)  
Keyword(1) Implantation  
Keyword(2) Incident beam angle  
Keyword(3) Energy contamination  
Keyword(4) Point defect generation  
Keyword(5) Device characteristics  
Keyword(6) Advanced MOSLSIs  
1st Author's Name Toshiharu Suzuki  
1st Author's Affiliation SEN Corporation an SHI and Axcelis Company (SEN)
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Date Time 2008-07-09 13:45:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-ED2008-44,IEICE-SDM2008-63 
Volume (vol) IEICE-108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.25-30 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-07-02,IEICE-SDM-2008-07-02 

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