Paper Abstract and Keywords |
Presentation |
2008-06-27 11:00
All optical memory based on compound-semiconductor photonic crystal nanocavity Akihiko Shinya, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Kouta Tateno, Takehiko Tawara, Masaya Notomi (NTT) OPE2008-21 LQE2008-22 Link to ES Tech. Rep. Archives: OPE2008-21 LQE2008-22 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have focused on an ultra small nanocavitiy in 2D photonic crystal (PhC) platform and realized an all-optical bistable memory on a Si based PhC operating with very low power. However, it is very difficult to achieve a long memory time for a Si based PhC owing to the accumulated heat in the cavity. To solve this problem, we developed ultra high Q AlGaAs and InGaAsP based PhC nanocavitis. Their Q factors are 690,000 and 130,000 respectively, which are highest Q factor ever reported. The memory time of AlGaAs-PhC cavity is conceptually infinity. As for the InGaAsP-PhC, the longest memory time is 150 ns and minimum bias power for bistability and switching ON energy are extremely low at 40uW and 30 fJ, respectively. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Photonic crystal / resonator / all-optical memory / photonic integrated circuit / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 114, LQE2008-22, pp. 17-20, June 2008. |
Paper # |
LQE2008-22 |
Date of Issue |
2008-06-20 (OPE, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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OPE2008-21 LQE2008-22 Link to ES Tech. Rep. Archives: OPE2008-21 LQE2008-22 |
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