Paper Abstract and Keywords |
Presentation |
2008-06-13 13:00
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22 Link to ES Tech. Rep. Archives: ED2008-22 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of AlGaN/GaN heterojunction field-effect transistors on sapphire substrates. Although the AlN passivation suppresses the drain current decrease at high drain voltage due to self-heating reduction, a deterioration of the off-state and the subthreshold characteristics is observed. On the other hand, the SiN passivation is less effective for the self-heating reduction, but does not deteriorate the off-state and the subthreshold characteristics. The SiN/AlN bilayer passivation does not deteriorate the off-state and the subthreshold characteristics, and is slightly effective for the self-heating reduction. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN heterojunction field-effect transistor / surface passivation / SiN/AlN bilayer structure / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 87, ED2008-22, pp. 1-4, June 2008. |
Paper # |
ED2008-22 |
Date of Issue |
2008-06-06 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-22 Link to ES Tech. Rep. Archives: ED2008-22 |
Conference Information |
Committee |
ED |
Conference Date |
2008-06-13 - 2008-06-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kanazawa University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process and device technology od semiconductors (surface, interface, reliability, etc.) |
Paper Information |
Registration To |
ED |
Conference Code |
2008-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure |
Sub Title (in English) |
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Keyword(1) |
AlGaN/GaN heterojunction field-effect transistor |
Keyword(2) |
surface passivation |
Keyword(3) |
SiN/AlN bilayer structure |
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1st Author's Name |
Nariaki Tanaka |
1st Author's Affiliation |
Japan Advanced Institute of Science and Technology (JAIST) |
2nd Author's Name |
Yasunobu Sumida |
2nd Author's Affiliation |
POWDEC K.K. (POWDEC) |
3rd Author's Name |
Hiroji Kawai |
3rd Author's Affiliation |
POWDEC K.K. (POWDEC) |
4th Author's Name |
Toshi-kazu Suzuki |
4th Author's Affiliation |
Japan Advanced Institute of Science and Technology (JAIST) |
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Speaker |
Author-1 |
Date Time |
2008-06-13 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-22 |
Volume (vol) |
vol.108 |
Number (no) |
no.87 |
Page |
pp.1-4 |
#Pages |
4 |
Date of Issue |
2008-06-06 (ED) |
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