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Paper Abstract and Keywords
Presentation 2008-06-13 13:00
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure
Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22 Link to ES Tech. Rep. Archives: ED2008-22
Abstract (in Japanese) (See Japanese page) 
(in English) By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of AlGaN/GaN heterojunction field-effect transistors on sapphire substrates. Although the AlN passivation suppresses the drain current decrease at high drain voltage due to self-heating reduction, a deterioration of the off-state and the subthreshold characteristics is observed. On the other hand, the SiN passivation is less effective for the self-heating reduction, but does not deteriorate the off-state and the subthreshold characteristics. The SiN/AlN bilayer passivation does not deteriorate the off-state and the subthreshold characteristics, and is slightly effective for the self-heating reduction.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN heterojunction field-effect transistor / surface passivation / SiN/AlN bilayer structure / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 87, ED2008-22, pp. 1-4, June 2008.
Paper # ED2008-22 
Date of Issue 2008-06-06 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-22 Link to ES Tech. Rep. Archives: ED2008-22

Conference Information
Committee ED  
Conference Date 2008-06-13 - 2008-06-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology od semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2008-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure 
Sub Title (in English)  
Keyword(1) AlGaN/GaN heterojunction field-effect transistor  
Keyword(2) surface passivation  
Keyword(3) SiN/AlN bilayer structure  
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1st Author's Name Nariaki Tanaka  
1st Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
2nd Author's Name Yasunobu Sumida  
2nd Author's Affiliation POWDEC K.K. (POWDEC)
3rd Author's Name Hiroji Kawai  
3rd Author's Affiliation POWDEC K.K. (POWDEC)
4th Author's Name Toshi-kazu Suzuki  
4th Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
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Speaker Author-1 
Date Time 2008-06-13 13:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-22 
Volume (vol) vol.108 
Number (no) no.87 
Page pp.1-4 
#Pages
Date of Issue 2008-06-06 (ED) 


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