| IEICE Technical Committee Submission System Conference Paper's Information |
Online Proceedings [Sign in] Tech. Rep. Archives |
| Go Top Page | Go Previous | [Japanese] / [English] |
| Paper Abstract and Keywords | ||
| Presentation | 2008-06-10 09:30 Transconductance enhancement of strained-Si nanowire FETs Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.)  SDM2008-48 Link to ES Tech. Rep. Archives: SDM2008-48 |
|
| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have demonstrated improved performance for Si nanowire FETs for CMOS operation by introducing tensile stress into the Si nanowires. Nanowires oxidized at 850℃ for 3h exhibited the largest transconductance (gm) by a factor of 1.5 in p-type nanowire FETs (n-nwFETs) and 3.0 in n-type nanowire FETs, with respect to those oxidized at 850℃ for 1h. The higher value of gm for p-type nanowire FETs (p-nwFETs) is strongly enhanced by the channel direction of the device. gm for p-type nanowire FETs is enhance by a factor of 1.29 in <110> devices compared with <100> devices. The additional enhancement in p-type nwFETs at higher Vds is due to the anisotropy of hole drift velocity with respect to the orientation of channel. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | nanowire / transistors / transconductance / strain / CMOS / UV Raman / MD simulation / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 80, SDM2008-48, pp. 35-39, June 2008. | |
| Paper # | SDM2008-48 | |
| Date of Issue | 2008-06-02 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-48 Link to ES Tech. Rep. Archives: SDM2008-48 |
|
| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-06-09 - 2008-06-10 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Transconductance enhancement of strained-Si nanowire FETs |
| Sub Title (in English) | |
| Keyword(1) | nanowire |
| Keyword(2) | transistors |
| Keyword(3) | transconductance |
| Keyword(4) | strain |
| Keyword(5) | CMOS |
| Keyword(6) | UV Raman |
| Keyword(7) | MD simulation |
| Keyword(8) | |
| 1st Author's Name | Aya Seike |
| 1st Author's Affiliation | Waseda University (Waseda Univ.) |
| 2nd Author's Name | Tomoyuki Tange |
| 2nd Author's Affiliation | Waseda University (Waseda Univ.) |
| 3rd Author's Name | Itsutaku Sano |
| 3rd Author's Affiliation | Waseda University (Waseda Univ.) |
| 4th Author's Name | Yuuki Sugiura |
| 4th Author's Affiliation | Waseda University (Waseda Univ.) |
| 5th Author's Name | Ikushin Tsuchida |
| 5th Author's Affiliation | Waseda University (Waseda Univ.) |
| 6th Author's Name | Hiromichi Ohta |
| 6th Author's Affiliation | Waseda University (Waseda Univ.) |
| 7th Author's Name | Takanobu Watanabe |
| 7th Author's Affiliation | Waseda University (Waseda Univ.) |
| 8th Author's Name | Daisuke Kosemura |
| 8th Author's Affiliation | Meiji University (Meiji Univ.) |
| 9th Author's Name | Atsushi Ogura |
| 9th Author's Affiliation | Meiji University (Meiji Univ.) |
| 10th Author's Name | Iwao Ohdomari |
| 10th Author's Affiliation | Waseda University (Waseda Univ.) |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| 13th Author's Name | |
| 13th Author's Affiliation | () |
| 14th Author's Name | |
| 14th Author's Affiliation | () |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2008-06-10 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-48 |
| Volume (vol) | vol.108 |
| Number (no) | no.80 |
| Page | pp.35-39 |
| #Pages | 6 |
| Date of Issue | 2008-06-02 (SDM) |
[Return to Top Page]