Paper Abstract and Keywords |
Presentation |
2008-05-29 16:40
Displacement current measurement for organic light-emitting diodes containing Alq3;
-- Hole accumulation properties at the hetero interface and the effects of light during device fabrication -- Yutaka Noguchi, Naoki Sato, Yuya Tanaka, Yasuo Nakayama, Hisao Ishii (Chiba Univ.) OME2008-31 Link to ES Tech. Rep. Archives: OME2008-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We examined the mechanism of charge accumulation in organic light-emitting diodes comprising tris-(8-hydroxyquinolate) aluminum (Alq$_3$) using a displacement current measurement. Depending on the applied biasing voltage, two kinds of accumulation behavior were observed. At the biases lower than the built-in voltage ($V_{\mathrm{bi}}$), the amount of hole accumulated at 4,4$^{\prime}$-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl/Alq$_3$ is dominated by the negative charge at the interface, but at the biases higher than $V_{\mathrm{bi}}$, it is determined by the conductivity of each layer. In addition, we found that light irradiation during the device fabrication significantly reduces the amount of hole accumulated at the interface, suggesting that the orientation polarization in Alq$_3$ film is responsible for the charge accumulation properties. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
organic light-emitting diode / charge accumulation / displacement current masurement / interfacial charge / giant surface potential / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 59, OME2008-31, pp. 55-60, May 2008. |
Paper # |
OME2008-31 |
Date of Issue |
2008-05-22 (OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
OME2008-31 Link to ES Tech. Rep. Archives: OME2008-31 |
Conference Information |
Committee |
OME |
Conference Date |
2008-05-29 - 2008-05-29 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Denki-Club, Meeting room 3 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Electronic organic materials |
Paper Information |
Registration To |
OME |
Conference Code |
2008-05-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Displacement current measurement for organic light-emitting diodes containing Alq3; |
Sub Title (in English) |
Hole accumulation properties at the hetero interface and the effects of light during device fabrication |
Keyword(1) |
organic light-emitting diode |
Keyword(2) |
charge accumulation |
Keyword(3) |
displacement current masurement |
Keyword(4) |
interfacial charge |
Keyword(5) |
giant surface potential |
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1st Author's Name |
Yutaka Noguchi |
1st Author's Affiliation |
Chiba University (Chiba Univ.) |
2nd Author's Name |
Naoki Sato |
2nd Author's Affiliation |
Chiba University (Chiba Univ.) |
3rd Author's Name |
Yuya Tanaka |
3rd Author's Affiliation |
Chiba University (Chiba Univ.) |
4th Author's Name |
Yasuo Nakayama |
4th Author's Affiliation |
Chiba University (Chiba Univ.) |
5th Author's Name |
Hisao Ishii |
5th Author's Affiliation |
Chiba University (Chiba Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-05-29 16:40:00 |
Presentation Time |
20 minutes |
Registration for |
OME |
Paper # |
OME2008-31 |
Volume (vol) |
vol.108 |
Number (no) |
no.59 |
Page |
pp.55-60 |
#Pages |
6 |
Date of Issue |
2008-05-22 (OME) |
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