Paper Abstract and Keywords |
Presentation |
2008-05-16 10:50
On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-13 CPM2008-21 SDM2008-33 Link to ES Tech. Rep. Archives: ED2008-13 CPM2008-21 SDM2008-33 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realize application to power switching devices, it is necessary to reduce on-resistance as well as to keep the breakdown voltage high enough. By changing the device parameters such as source-drain distance, gate length, etc., correlation between on-resistance and breakdown voltage was deduced experimentally. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / GaN / Junction HFET / p-type GaN gate / normally-off / low on-resistance / Breakdown Voltage / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 34, ED2008-13, pp. 61-66, May 2008. |
Paper # |
ED2008-13 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-13 CPM2008-21 SDM2008-33 Link to ES Tech. Rep. Archives: ED2008-13 CPM2008-21 SDM2008-33 |
Conference Information |
Committee |
CPM ED SDM |
Conference Date |
2008-05-15 - 2008-05-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) |
Paper Information |
Registration To |
ED |
Conference Code |
2008-05-CPM-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact |
Sub Title (in English) |
|
Keyword(1) |
AlGaN |
Keyword(2) |
GaN |
Keyword(3) |
Junction HFET |
Keyword(4) |
p-type GaN gate |
Keyword(5) |
normally-off |
Keyword(6) |
low on-resistance |
Keyword(7) |
Breakdown Voltage |
Keyword(8) |
|
1st Author's Name |
Ryohei Nega |
1st Author's Affiliation |
Meijo University (Meijo Univ.) |
2nd Author's Name |
Katsutoshi Mizuno |
2nd Author's Affiliation |
Meijo University (Meijo Univ.) |
3rd Author's Name |
Motoaki Iwaya |
3rd Author's Affiliation |
Meijo University (Meijo Univ.) |
4th Author's Name |
Satoshi Kamiyama |
4th Author's Affiliation |
Meijo University (Meijo Univ.) |
5th Author's Name |
Hiroshi Amano |
5th Author's Affiliation |
Meijo University (Meijo Univ.) |
6th Author's Name |
Isamu Akasaki |
6th Author's Affiliation |
Meijo University (Meijo Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-05-16 10:50:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-13, CPM2008-21, SDM2008-33 |
Volume (vol) |
vol.108 |
Number (no) |
no.34(ED), no.35(CPM), no.36(SDM) |
Page |
pp.61-66 |
#Pages |
6 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
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