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Paper Abstract and Keywords
Presentation 2008-05-16 14:40
Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition
Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39 Link to ES Tech. Rep. Archives: ED2008-19 CPM2008-27 SDM2008-39
Abstract (in Japanese) (See Japanese page) 
(in English) 4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers.However it is reported that the forward bias property is unstable between diodes because of inhomogeneity of Schottky barrier height.We observed regions with a low Schottky barrier height on 4H-SiC surface by the electrochemical deposition of ZnO.After removing ZnO,we fabricated Ni Schottky diodes on the position with and without deposited ZnO films.Then,we compared the Schottky barrier height of the diodes fabricated on the position with and without deposited ZnO films.Schottky barrier heights of Schottky Diodes fabricated on the position of a deposited ZnO film were lower than the one fabricated on the position of no deposited ZnO films.Molten salt etching reveal that approximately half of the ZnO films were deposited on the position of etch pit , while other films were deposited on the position of no etch pit.
Keyword (in Japanese) (See Japanese page) 
(in English) 4H-SiC / Schottky barrier height / defect / electrochemical deposition / ZnO / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 34, ED2008-19, pp. 89-94, May 2008.
Paper # ED2008-19 
Date of Issue 2008-05-08 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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Download PDF ED2008-19 CPM2008-27 SDM2008-39 Link to ES Tech. Rep. Archives: ED2008-19 CPM2008-27 SDM2008-39

Conference Information
Committee CPM ED SDM  
Conference Date 2008-05-15 - 2008-05-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) 
Paper Information
Registration To ED 
Conference Code 2008-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition 
Sub Title (in English)  
Keyword(1) 4H-SiC  
Keyword(2) Schottky barrier height  
Keyword(3) defect  
Keyword(4) electrochemical deposition  
Keyword(5) ZnO  
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1st Author's Name Hidenori Ono  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Kazuya Ogawa  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Masashi Kato  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
4th Author's Name Masaya Ichimura  
4th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker
Date Time 2008-05-16 14:40:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2008-19,IEICE-CPM2008-27,IEICE-SDM2008-39 
Volume (vol) IEICE-108 
Number (no) no.34(ED), no.35(CPM), no.36(SDM) 
Page pp.89-94 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-05-08,IEICE-CPM-2008-05-08,IEICE-SDM-2008-05-08 


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