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Paper Abstract and Keywords
Presentation 2008-05-16 15:30
Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method
Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech) ED2008-21 CPM2008-29 SDM2008-41 Link to ES Tech. Rep. Archives: ED2008-21 CPM2008-29 SDM2008-41
Abstract (in Japanese) (See Japanese page) 
(in English) We characterized deep levels that influence a semi-insulating property by current-voltage, capacitance-voltage and current deep-level transient spectroscopy measurement for high resistive 6H-SiC bulk wafers. In addition, photo induced current level transient spectroscopy measurements were performed to evaluate minority carrier traps. As a result, in the sample with lower resistivity, the donor level of Ec-0.17eV introduced during the crystal growth process decreased the resistivity. In the sample with higher resistivity, an acceptor level of Ec-0.77eV would compensate for the electron, and the other levels also may contribute to high resistivity of this sample.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / deep level / current-voltage / capacitance-voltage / DLTS / PICTS / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 34, ED2008-21, pp. 101-106, May 2008.
Paper # ED2008-21 
Date of Issue 2008-05-08 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-21 CPM2008-29 SDM2008-41 Link to ES Tech. Rep. Archives: ED2008-21 CPM2008-29 SDM2008-41

Conference Information
Committee CPM ED SDM  
Conference Date 2008-05-15 - 2008-05-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) 
Paper Information
Registration To ED 
Conference Code 2008-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) deep level  
Keyword(3) current-voltage  
Keyword(4) capacitance-voltage  
Keyword(5) DLTS  
Keyword(6) PICTS  
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Keyword(8)  
1st Author's Name Kosuke Kito  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech)
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Speaker Author-1 
Date Time 2008-05-16 15:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-21, CPM2008-29, SDM2008-41 
Volume (vol) vol.108 
Number (no) no.34(ED), no.35(CPM), no.36(SDM) 
Page pp.101-106 
#Pages
Date of Issue 2008-05-08 (ED, CPM, SDM) 


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