Paper Abstract and Keywords |
Presentation |
2008-05-16 15:30
Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech) ED2008-21 CPM2008-29 SDM2008-41 Link to ES Tech. Rep. Archives: ED2008-21 CPM2008-29 SDM2008-41 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We characterized deep levels that influence a semi-insulating property by current-voltage, capacitance-voltage and current deep-level transient spectroscopy measurement for high resistive 6H-SiC bulk wafers. In addition, photo induced current level transient spectroscopy measurements were performed to evaluate minority carrier traps. As a result, in the sample with lower resistivity, the donor level of Ec-0.17eV introduced during the crystal growth process decreased the resistivity. In the sample with higher resistivity, an acceptor level of Ec-0.77eV would compensate for the electron, and the other levels also may contribute to high resistivity of this sample. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / deep level / current-voltage / capacitance-voltage / DLTS / PICTS / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 34, ED2008-21, pp. 101-106, May 2008. |
Paper # |
ED2008-21 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-21 CPM2008-29 SDM2008-41 Link to ES Tech. Rep. Archives: ED2008-21 CPM2008-29 SDM2008-41 |
Conference Information |
Committee |
CPM ED SDM |
Conference Date |
2008-05-15 - 2008-05-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) |
Paper Information |
Registration To |
ED |
Conference Code |
2008-05-CPM-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method |
Sub Title (in English) |
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Keyword(1) |
SiC |
Keyword(2) |
deep level |
Keyword(3) |
current-voltage |
Keyword(4) |
capacitance-voltage |
Keyword(5) |
DLTS |
Keyword(6) |
PICTS |
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Keyword(8) |
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1st Author's Name |
Kosuke Kito |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech) |
2nd Author's Name |
Masashi Kato |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech) |
3rd Author's Name |
Masaya Ichimura |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech) |
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Speaker |
Author-1 |
Date Time |
2008-05-16 15:30:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-21, CPM2008-29, SDM2008-41 |
Volume (vol) |
vol.108 |
Number (no) |
no.34(ED), no.35(CPM), no.36(SDM) |
Page |
pp.101-106 |
#Pages |
6 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
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