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| Presentation | 2008-04-22 15:10 X-Band 14W High Efficiency Internally-Matched HFET Kazutomi Mori, Jun Nishihara, Hiromitsu Utsumi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Corp.)  SCE2008-11 MW2008-11 Link to ES Tech. Rep. Archives: SCE2008-11 MW2008-11 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | An X-Band 14W high efficiency internally-matched HFET has been developed. In order to achieve high efficiency, not only equal combining characteristics but also equal load impedance for each unit FET cell are designed in the input and output matching circuits using EM simulator. In addition to the power splitting and combining characteristics, the large signal load impedance of each FET cell is discussed. The degradation of the efficiency by unequal operation of each FET cell and by mismatch to the optimum load impedance are suppressed within 1% and 2%, respectively in the design. The developed HFET has achieved a power-added efficiency (PAE) of 49.8% and an output power of 41.6dBm(14.5W) in X-band. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Microwave / Amplifier / FET / Efficiency / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 13, MW2008-11, pp. 59-62, April 2008. | |
| Paper # | MW2008-11 | |
| Date of Issue | 2008-04-15 (SCE, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SCE2008-11 MW2008-11 Link to ES Tech. Rep. Archives: SCE2008-11 MW2008-11 |
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| Conference Information | |
| Committee | SCE MW |
| Conference Date | 2008-04-22 - 2008-04-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Microwave, Superconductivity |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2008-04-SCE-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | X-Band 14W High Efficiency Internally-Matched HFET |
| Sub Title (in English) | |
| Keyword(1) | Microwave |
| Keyword(2) | Amplifier |
| Keyword(3) | FET |
| Keyword(4) | Efficiency |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Kazutomi Mori |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 2nd Author's Name | Jun Nishihara |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 3rd Author's Name | Hiromitsu Utsumi |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 4th Author's Name | Akira Inoue |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
| 5th Author's Name | Moriyasu Miyazaki |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric Corp.) |
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| Speaker | Author-1 |
| Date Time | 2008-04-22 15:10:00 |
| Presentation Time | 20 minutes |
| Registration for | MW |
| Paper # | SCE2008-11, MW2008-11 |
| Volume (vol) | vol.108 |
| Number (no) | no.12(SCE), no.13(MW) |
| Page | pp.59-62 |
| #Pages | 4 |
| Date of Issue | 2008-04-15 (SCE, MW) |
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