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| Presentation | 2008-04-11 10:35 Electrical activation of heavily doped Si film by crystallization annealing Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN)  SDM2008-4 OME2008-4 Link to ES Tech. Rep. Archives: SDM2008-4 OME2008-4 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | After UV pulsed excimer laser annealing for highly boron-, or phosphorus dosed Si film, the relationship between the conductivity and the correlating crystallinity in the film was analyzed. The crystallinity and its internal stress were analyzed by using S.E. (Spectroscopic Ellipsometry) or by Raman scattering, respectively, for the poly-crystallized Si film. As a result, the sheet resistance decreased with improving the crystallinity. By adopting and optimizing the excimer laser annealing, efficient solidified activation after melting occurs, the Si film of 50 nm thickness shows extremely low sheet resistance below 90 ohm/sq. for the dose of 2E15 cm-2. Even for p-typed case, extremely low sheet resistance as low as 50 ohm/sq. was obtained for a B+ dose of 5e15 cm-2. Clear tensile stress was observed similar to the case of ELC (Excimer Laser Crystallization) for un-doped Si film. ELA activation subsequently after ion implantation is considered to be effective to the formation of source and drain or Si gate in CMOS TFTs as well as an electrode for pin sensor diode for SoP (System on Panel) application. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ELA / poly-Si / TFT / Raman / S.E. / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 1, SDM2008-4, pp. 17-22, April 2008. | |
| Paper # | SDM2008-4 | |
| Date of Issue | 2008-04-04 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-4 OME2008-4 Link to ES Tech. Rep. Archives: SDM2008-4 OME2008-4 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2008-04-11 - 2008-04-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | TFT Materials, Devices, and Applications and Others related to SDM and OME activity |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical activation of heavily doped Si film by crystallization annealing |
| Sub Title (in English) | |
| Keyword(1) | ELA |
| Keyword(2) | poly-Si |
| Keyword(3) | TFT |
| Keyword(4) | Raman |
| Keyword(5) | S.E. |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takashi Noguchi |
| 1st Author's Affiliation | University of the Ryukyus (Univ. Ryukyus) |
| 2nd Author's Name | Tomoyuki Miyahira |
| 2nd Author's Affiliation | University of the Ryukyus (Univ. Ryukyus) |
| 3rd Author's Name | Kenji Kawai |
| 3rd Author's Affiliation | University of the Ryukyus (Univ. Ryukyus) |
| 4th Author's Name | Toshiharu Suzuki |
| 4th Author's Affiliation | SEN Corporation an SHI and Axcelis Company (SEN) |
| 5th Author's Name | Masateru Sato |
| 5th Author's Affiliation | SEN Corporation an SHI and Axcelis Company (SEN) |
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| Speaker | Author-1 |
| Date Time | 2008-04-11 10:35:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-4, OME2008-4 |
| Volume (vol) | vol.108 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.17-22 |
| #Pages | 6 |
| Date of Issue | 2008-04-04 (SDM, OME) |
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