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| Presentation | 2008-03-14 13:05 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba)  SDM2007-273 Link to ES Tech. Rep. Archives: SDM2007-273 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | 15nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides, retains 2.7 decades memory window for 10 years be-low 10V write / erase (w/e) voltages. S-factor is controlled by source/drain (S/D) junction depth and channel concentration. It is experimentally shown that S to D direct tunneling deter-mines a physical limit of S-factor control below 15 nm scale. Further device scaling and improvement by Si nanocrystal scaling are possible within the limit of S-factor control. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si nanocrystal / Quantum dot / Flash memory / SONOS / MONOS / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 549, SDM2007-273, pp. 1-6, March 2008. | |
| Paper # | SDM2007-273 | |
| Date of Issue | 2008-03-07 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-273 Link to ES Tech. Rep. Archives: SDM2007-273 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-03-14 - 2008-03-14 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-03-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers |
| Sub Title (in English) | |
| Keyword(1) | Si nanocrystal |
| Keyword(2) | Quantum dot |
| Keyword(3) | Flash memory |
| Keyword(4) | SONOS |
| Keyword(5) | MONOS |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryuji Ohba |
| 1st Author's Affiliation | Toshiba R&D Center (Toshiba) |
| 2nd Author's Name | Yuichiro Mitani |
| 2nd Author's Affiliation | Toshiba R&D Center (Toshiba) |
| 3rd Author's Name | Naoharu Sugiyama |
| 3rd Author's Affiliation | Toshiba R&D Center (Toshiba) |
| 4th Author's Name | Shinobu Fujita |
| 4th Author's Affiliation | Toshiba R&D Center (Toshiba) |
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| Speaker | Author-1 |
| Date Time | 2008-03-14 13:05:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-273 |
| Volume (vol) | vol.107 |
| Number (no) | no.549 |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2008-03-07 (SDM) |
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