Paper Abstract and Keywords |
Presentation |
2008-01-31 09:25
Approaches to the high temperature operation of the carbon nanotube single electron transistor Takahiro Mori (RIKEN), Shunsuke Sato, Kazuo Omura, Katsumi Uchida, Hirofumi Yajima (TUS), Koji Ishibashi (RIKEN) ED2007-245 SDM2007-256 Link to ES Tech. Rep. Archives: ED2007-245 SDM2007-256 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Single-walled carbon nanotubes (SWNTs) are promising candidates for the building block of the single electron transistor (SET). To achieve the room-temperature operation, we tried to improve the temperature characteristics of the SWNT-SETs. The barriers, which confine electrons in the Coulomb island, dominate the temperature characteristics of the SWNT-SETs mainly. We report our approaches to form the “good” barriers. Two approaches are under way, one is the method for the barrier characteristics improvement with an organic material, and the other is the barrier formation with the defects induced by ion beam. We achieved the operation temperature of 80K and 120K, by the respective methods. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
carbon nanotube / single electron transistor / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 473, ED2007-245, pp. 43-46, Jan. 2008. |
Paper # |
ED2007-245 |
Date of Issue |
2008-01-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-245 SDM2007-256 Link to ES Tech. Rep. Archives: ED2007-245 SDM2007-256 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2008-01-30 - 2008-01-31 |
Place (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2008-01-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Approaches to the high temperature operation of the carbon nanotube single electron transistor |
Sub Title (in English) |
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carbon nanotube |
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single electron transistor |
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1st Author's Name |
Takahiro Mori |
1st Author's Affiliation |
RIKEN (RIKEN) |
2nd Author's Name |
Shunsuke Sato |
2nd Author's Affiliation |
Tokyo University of Science (TUS) |
3rd Author's Name |
Kazuo Omura |
3rd Author's Affiliation |
Tokyo University of Science (TUS) |
4th Author's Name |
Katsumi Uchida |
4th Author's Affiliation |
Tokyo University of Science (TUS) |
5th Author's Name |
Hirofumi Yajima |
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Tokyo University of Science (TUS) |
6th Author's Name |
Koji Ishibashi |
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RIKEN (RIKEN) |
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Speaker |
Author-1 |
Date Time |
2008-01-31 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-245, SDM2007-256 |
Volume (vol) |
vol.107 |
Number (no) |
no.473(ED), no.474(SDM) |
Page |
pp.43-46 |
#Pages |
4 |
Date of Issue |
2008-01-23 (ED, SDM) |
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