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Paper Abstract and Keywords
Presentation 2008-01-31 09:25
Approaches to the high temperature operation of the carbon nanotube single electron transistor
Takahiro Mori (RIKEN), Shunsuke Sato, Kazuo Omura, Katsumi Uchida, Hirofumi Yajima (TUS), Koji Ishibashi (RIKEN) ED2007-245 SDM2007-256 Link to ES Tech. Rep. Archives: ED2007-245 SDM2007-256
Abstract (in Japanese) (See Japanese page) 
(in English) Single-walled carbon nanotubes (SWNTs) are promising candidates for the building block of the single electron transistor (SET). To achieve the room-temperature operation, we tried to improve the temperature characteristics of the SWNT-SETs. The barriers, which confine electrons in the Coulomb island, dominate the temperature characteristics of the SWNT-SETs mainly. We report our approaches to form the “good” barriers. Two approaches are under way, one is the method for the barrier characteristics improvement with an organic material, and the other is the barrier formation with the defects induced by ion beam. We achieved the operation temperature of 80K and 120K, by the respective methods.
Keyword (in Japanese) (See Japanese page) 
(in English) carbon nanotube / single electron transistor / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 473, ED2007-245, pp. 43-46, Jan. 2008.
Paper # ED2007-245 
Date of Issue 2008-01-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-245 SDM2007-256 Link to ES Tech. Rep. Archives: ED2007-245 SDM2007-256

Conference Information
Committee ED SDM  
Conference Date 2008-01-30 - 2008-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
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Paper Information
Registration To ED 
Conference Code 2008-01-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Approaches to the high temperature operation of the carbon nanotube single electron transistor 
Sub Title (in English)  
Keyword(1) carbon nanotube  
Keyword(2) single electron transistor  
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1st Author's Name Takahiro Mori  
1st Author's Affiliation RIKEN (RIKEN)
2nd Author's Name Shunsuke Sato  
2nd Author's Affiliation Tokyo University of Science (TUS)
3rd Author's Name Kazuo Omura  
3rd Author's Affiliation Tokyo University of Science (TUS)
4th Author's Name Katsumi Uchida  
4th Author's Affiliation Tokyo University of Science (TUS)
5th Author's Name Hirofumi Yajima  
5th Author's Affiliation Tokyo University of Science (TUS)
6th Author's Name Koji Ishibashi  
6th Author's Affiliation RIKEN (RIKEN)
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Speaker Author-1 
Date Time 2008-01-31 09:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-245, SDM2007-256 
Volume (vol) vol.107 
Number (no) no.473(ED), no.474(SDM) 
Page pp.43-46 
#Pages
Date of Issue 2008-01-23 (ED, SDM) 


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