Paper Abstract and Keywords |
Presentation |
2008-01-30 15:55
Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) ED2007-242 SDM2007-253 Link to ES Tech. Rep. Archives: ED2007-242 SDM2007-253 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We fabricated InAs/AlGaSb three-terminal ballistic junction devices composed of three quantum wires, and characterised electron transport properties with scanning the voltage on the left branch while keeping the voltage on the right constant at 77K and 300K. In these structures, we observed clear nonlinearity in the output voltage measured at the central branch. The nonlinear characteristics agreed well with a theoretical prediction. When the left branch is biased to a finite voltage V and the right to a voltage of –V (push-pull fashion), negative voltages appeared at the central branch regardless of the polarity of V. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InAs/AlGaSb heterostructures / Ballistic electron transport / Nonlinear electron transport / Quantum wire / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 473, ED2007-242, pp. 29-32, Jan. 2008. |
Paper # |
ED2007-242 |
Date of Issue |
2008-01-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2007-242 SDM2007-253 Link to ES Tech. Rep. Archives: ED2007-242 SDM2007-253 |
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