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| Presentation | 2008-01-29 09:55 Growth of GaAsBi/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy Yusuke Kinoshita, Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto (Kyoto Inst.Tec.)  PN2007-56 OPE2007-164 LQE2007-142 Link to ES Tech. Rep. Archives: OPE2007-164 LQE2007-142 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaAs1-xBix/GaAs multi-quantum well (MQW) structures were grown on GaAs substrate by molecular beam epitaxy (MBE) towards a new semiconductor laser diode with a temperature-insensitive wavelength. Satellite peaks ascribed to the MQW structure were observed in the X-ray diffraction (XRD) measurement. With decreasing the well width of MQW, the photoluminescence (PL) peak energy increased, indicating the quantum size effect. Both intensities and position of the satellite peaks of MQW in XRD did not change, and the PL peak energy was kept constant, after annealing at temperatures less than 700℃. This confirms the thermal stability of the GaAs1-xBix/GaAs MQW structure. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaAs / GaAsBi / semimetal / multi-quantum wells / molecular beam epitaxy / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 466, LQE2007-142, pp. 107-110, Jan. 2008. | |
| Paper # | LQE2007-142 | |
| Date of Issue | 2008-01-21 (PN, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | PN2007-56 OPE2007-164 LQE2007-142 Link to ES Tech. Rep. Archives: OPE2007-164 LQE2007-142 |
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| Conference Information | |
| Committee | EMT LQE OPE PN |
| Conference Date | 2008-01-28 - 2008-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-01-EMT-LQE-OPE-PN |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaAsBi/GaAs Multi-Quantum Wells by Molecular Beam Epitaxy |
| Sub Title (in English) | |
| Keyword(1) | GaAs |
| Keyword(2) | GaAsBi |
| Keyword(3) | semimetal |
| Keyword(4) | multi-quantum wells |
| Keyword(5) | molecular beam epitaxy |
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| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yusuke Kinoshita |
| 1st Author's Affiliation | Kyoto Institute of Technology (Kyoto Inst.Tec.) |
| 2nd Author's Name | Yoriko Tominaga |
| 2nd Author's Affiliation | Kyoto Institute of Technology (Kyoto Inst.Tec.) |
| 3rd Author's Name | Kunishige Oe |
| 3rd Author's Affiliation | Kyoto Institute of Technology (Kyoto Inst.Tec.) |
| 4th Author's Name | Masahiro Yoshimoto |
| 4th Author's Affiliation | Kyoto Institute of Technology (Kyoto Inst.Tec.) |
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| Speaker | Author-1 |
| Date Time | 2008-01-29 09:55:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | PN2007-56, OPE2007-164, LQE2007-142 |
| Volume (vol) | vol.107 |
| Number (no) | no.464(PN), no.465(OPE), no.466(LQE) |
| Page | pp.107-110 |
| #Pages | 4 |
| Date of Issue | 2008-01-21 (PN, OPE, LQE) |
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