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| Presentation | 2008-01-29 09:30 Influence of Band Offset on Carrier Lifetime in Quantum Well Lasers Shinichi Kakuda, Hideaki Nishimura, Masashi Tanaka, Wataru Susaki (OECU)  PN2007-55 OPE2007-163 LQE2007-141 Link to ES Tech. Rep. Archives: OPE2007-163 LQE2007-141 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Carrier recombination lifetime of various kinds of separate-confinement quantum well lasers formed on GaAs and InP substrates has been systematically measured by lasing delay time. It decreases by overflow of electrons below threshold in lasers with small band offset energy between the quantum well and the waveguide/barrier layers. Decrease of carrier recombination lifetime might be due to the increase of non-lasing recombination of electrons injected into the electron -confining-well formed by Coulomb attractive force between overflowing electrons and confined holes in the quantum well. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Quantum Well / Carrier Recombination Lifetime / Band Offset / Electron Overflow / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 466, LQE2007-141, pp. 101-106, Jan. 2008. | |
| Paper # | LQE2007-141 | |
| Date of Issue | 2008-01-21 (PN, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | PN2007-55 OPE2007-163 LQE2007-141 Link to ES Tech. Rep. Archives: OPE2007-163 LQE2007-141 |
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| Conference Information | |
| Committee | EMT LQE OPE PN |
| Conference Date | 2008-01-28 - 2008-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-01-EMT-LQE-OPE-PN |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Influence of Band Offset on Carrier Lifetime in Quantum Well Lasers |
| Sub Title (in English) | |
| Keyword(1) | Quantum Well |
| Keyword(2) | Carrier Recombination Lifetime |
| Keyword(3) | Band Offset |
| Keyword(4) | Electron Overflow |
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| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Shinichi Kakuda |
| 1st Author's Affiliation | Osaka Electro-Communication University (OECU) |
| 2nd Author's Name | Hideaki Nishimura |
| 2nd Author's Affiliation | Osaka Electro-Communication University (OECU) |
| 3rd Author's Name | Masashi Tanaka |
| 3rd Author's Affiliation | Osaka Electro-Communication University (OECU) |
| 4th Author's Name | Wataru Susaki |
| 4th Author's Affiliation | Osaka Electro-Communication University (OECU) |
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| Speaker | Author-1 |
| Date Time | 2008-01-29 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | PN2007-55, OPE2007-163, LQE2007-141 |
| Volume (vol) | vol.107 |
| Number (no) | no.464(PN), no.465(OPE), no.466(LQE) |
| Page | pp.101-106 |
| #Pages | 6 |
| Date of Issue | 2008-01-21 (PN, OPE, LQE) |
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