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Paper Abstract and Keywords
Presentation 2008-01-17 13:00
A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications
Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Nobuyuki Ogawa, Teruyuki Shimura (MELCO) ED2007-219 MW2007-150 Link to ES Tech. Rep. Archives: ED2007-219 MW2007-150
Abstract (in Japanese) (See Japanese page) 
(in English) This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in wireless applications. The detector features logarithm-like, frequency-independent characteristics. The detector can be also driven with small input power levels, enabling base-terminal monitor which can utilize directivity of a power stage. Since a unique current-mirror-based topology is successfully employed for realizing these features, the detector is easy to implement on a GaAs-HBT power amplifier. Measurement results of a prototype detector fabricated with a single-stage amplifier on the same die are as follows. The detector can deliver a detection voltage of 0.4-2.5 V and its slope of less than 0.17 V/dB over a 2-22-dBm output power range at 3.5 GHz while drawing a current of less than 1.8mA from a 2.85-V supply. The detector is also capable of suppressing voltage dispersion within 50 mV over a 3.1-3.9-GHz wide frequency range operation, and this dispersion is less than one-seventh of that of a conventional collector-terminal-monitor type diode detector.
Keyword (in Japanese) (See Japanese page) 
(in English) Wireless LAN / RF detector / heterojunction bipolar transistors / WiMAX / MMIC / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 420, ED2007-219, pp. 71-76, Jan. 2008.
Paper # ED2007-219 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-219 MW2007-150 Link to ES Tech. Rep. Archives: ED2007-219 MW2007-150

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2008-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications 
Sub Title (in English)  
Keyword(1) Wireless LAN  
Keyword(2) RF detector  
Keyword(3) heterojunction bipolar transistors  
Keyword(4) WiMAX  
Keyword(5) MMIC  
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Keyword(8)  
1st Author's Name Kazuya Yamamoto  
1st Author's Affiliation Mitsubishi Electric Corporation (MELCO)
2nd Author's Name Miyo Miyashita  
2nd Author's Affiliation Mitsubishi Electric Corporation (MELCO)
3rd Author's Name Hitoshi Kurusu  
3rd Author's Affiliation Mitsubishi Electric Corporation (MELCO)
4th Author's Name Nobuyuki Ogawa  
4th Author's Affiliation Mitsubishi Electric Corporation (MELCO)
5th Author's Name Teruyuki Shimura  
5th Author's Affiliation Mitsubishi Electric Corporation (MELCO)
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Speaker
Date Time 2008-01-17 13:00:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2007-219,IEICE-MW2007-150 
Volume (vol) IEICE-107 
Number (no) no.420(ED), no.421(MW) 
Page pp.71-76 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-01-09,IEICE-MW-2008-01-09 


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