Paper Abstract and Keywords |
Presentation |
2008-01-17 13:00
A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Nobuyuki Ogawa, Teruyuki Shimura (MELCO) ED2007-219 MW2007-150 Link to ES Tech. Rep. Archives: ED2007-219 MW2007-150 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in wireless applications. The detector features logarithm-like, frequency-independent characteristics. The detector can be also driven with small input power levels, enabling base-terminal monitor which can utilize directivity of a power stage. Since a unique current-mirror-based topology is successfully employed for realizing these features, the detector is easy to implement on a GaAs-HBT power amplifier. Measurement results of a prototype detector fabricated with a single-stage amplifier on the same die are as follows. The detector can deliver a detection voltage of 0.4-2.5 V and its slope of less than 0.17 V/dB over a 2-22-dBm output power range at 3.5 GHz while drawing a current of less than 1.8mA from a 2.85-V supply. The detector is also capable of suppressing voltage dispersion within 50 mV over a 3.1-3.9-GHz wide frequency range operation, and this dispersion is less than one-seventh of that of a conventional collector-terminal-monitor type diode detector. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Wireless LAN / RF detector / heterojunction bipolar transistors / WiMAX / MMIC / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 420, ED2007-219, pp. 71-76, Jan. 2008. |
Paper # |
ED2007-219 |
Date of Issue |
2008-01-09 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-219 MW2007-150 Link to ES Tech. Rep. Archives: ED2007-219 MW2007-150 |
Conference Information |
Committee |
ED MW |
Conference Date |
2008-01-16 - 2008-01-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor IC, High-speed and high-frequency devices |
Paper Information |
Registration To |
ED |
Conference Code |
2008-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications |
Sub Title (in English) |
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Keyword(1) |
Wireless LAN |
Keyword(2) |
RF detector |
Keyword(3) |
heterojunction bipolar transistors |
Keyword(4) |
WiMAX |
Keyword(5) |
MMIC |
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1st Author's Name |
Kazuya Yamamoto |
1st Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
2nd Author's Name |
Miyo Miyashita |
2nd Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
3rd Author's Name |
Hitoshi Kurusu |
3rd Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
4th Author's Name |
Nobuyuki Ogawa |
4th Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
5th Author's Name |
Teruyuki Shimura |
5th Author's Affiliation |
Mitsubishi Electric Corporation (MELCO) |
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Speaker |
Author-1 |
Date Time |
2008-01-17 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-219, MW2007-150 |
Volume (vol) |
vol.107 |
Number (no) |
no.420(ED), no.421(MW) |
Page |
pp.71-76 |
#Pages |
6 |
Date of Issue |
2008-01-09 (ED, MW) |
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