Paper Abstract and Keywords |
Presentation |
2008-01-17 11:10
Improvement in reliability of InGaP/GaAs HBT's by ledge passivation Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148 Link to ES Tech. Rep. Archives: ED2007-217 MW2007-148 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced by the surface recombination in the GaAs base. We implemented the ledge passivation to suppress the surface recombination. The InGaP ledge passivation, indeed, suppresses the surface recombination and increases the current gain. Furthermore, the ledge passivation suppresses the degradation due to electrical stress. It is, however, not sufficient to maintain a high current gain after the electrical stress applied to the HBT at high temperature. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Heterojunction bipolar transistors(HBT) / InGaP/GaAs / surface recombination / ledge passivation / electrical stress / temperature characteristics / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 421, MW2007-148, pp. 61-66, Jan. 2008. |
Paper # |
MW2007-148 |
Date of Issue |
2008-01-09 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-217 MW2007-148 Link to ES Tech. Rep. Archives: ED2007-217 MW2007-148 |
Conference Information |
Committee |
ED MW |
Conference Date |
2008-01-16 - 2008-01-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor IC, High-speed and high-frequency devices |
Paper Information |
Registration To |
MW |
Conference Code |
2008-01-ED-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Improvement in reliability of InGaP/GaAs HBT's by ledge passivation |
Sub Title (in English) |
|
Keyword(1) |
Heterojunction bipolar transistors(HBT) |
Keyword(2) |
InGaP/GaAs |
Keyword(3) |
surface recombination |
Keyword(4) |
ledge passivation |
Keyword(5) |
electrical stress |
Keyword(6) |
temperature characteristics |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Fu-Ying Yang |
1st Author's Affiliation |
The University of Electro-Communications (UEC) |
2nd Author's Name |
Shinji Nozaki |
2nd Author's Affiliation |
The University of Electro-Communications (UEC) |
3rd Author's Name |
Kazuo Uchida |
3rd Author's Affiliation |
The University of Electro-Communications (UEC) |
4th Author's Name |
Atsushi Koizumi |
4th Author's Affiliation |
The University of Electro-Communications (UEC) |
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Speaker |
Author-1 |
Date Time |
2008-01-17 11:10:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
ED2007-217, MW2007-148 |
Volume (vol) |
vol.107 |
Number (no) |
no.420(ED), no.421(MW) |
Page |
pp.61-66 |
#Pages |
6 |
Date of Issue |
2008-01-09 (ED, MW) |
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