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Paper Abstract and Keywords
Presentation 2008-01-17 11:10
Improvement in reliability of InGaP/GaAs HBT's by ledge passivation
Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148 Link to ES Tech. Rep. Archives: ED2007-217 MW2007-148
Abstract (in Japanese) (See Japanese page) 
(in English) Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced by the surface recombination in the GaAs base. We implemented the ledge passivation to suppress the surface recombination. The InGaP ledge passivation, indeed, suppresses the surface recombination and increases the current gain. Furthermore, the ledge passivation suppresses the degradation due to electrical stress. It is, however, not sufficient to maintain a high current gain after the electrical stress applied to the HBT at high temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) Heterojunction bipolar transistors(HBT) / InGaP/GaAs / surface recombination / ledge passivation / electrical stress / temperature characteristics / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 421, MW2007-148, pp. 61-66, Jan. 2008.
Paper # MW2007-148 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-217 MW2007-148 Link to ES Tech. Rep. Archives: ED2007-217 MW2007-148

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To MW 
Conference Code 2008-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Improvement in reliability of InGaP/GaAs HBT's by ledge passivation 
Sub Title (in English)  
Keyword(1) Heterojunction bipolar transistors(HBT)  
Keyword(2) InGaP/GaAs  
Keyword(3) surface recombination  
Keyword(4) ledge passivation  
Keyword(5) electrical stress  
Keyword(6) temperature characteristics  
1st Author's Name Fu-Ying Yang  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Shinji Nozaki  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Kazuo Uchida  
3rd Author's Affiliation The University of Electro-Communications (UEC)
4th Author's Name Atsushi Koizumi  
4th Author's Affiliation The University of Electro-Communications (UEC)
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Date Time 2008-01-17 11:10:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-ED2007-217,IEICE-MW2007-148 
Volume (vol) IEICE-107 
Number (no) no.420(ED), no.421(MW) 
Page pp.61-66 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-01-09,IEICE-MW-2008-01-09 

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