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| Presentation | 2008-01-17 09:45 Examination of dual band CMOS RF power amplifier circuit Jun Kikuchi (Gunma Univ.), Hisayasu Sato (Renesas Technology Corporation), Noboru Ishihara (Gunma Univ.)  ED2007-214 MW2007-145 Link to ES Tech. Rep. Archives: ED2007-214 MW2007-145 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Dual-band CMOS RF power amplifier circuit design techniques have been studied. In CMOS power amplifier design with low power supply voltage, it is clarified analytically that current mode design considering small parasitic impedances of chip layout. And carrier velocity saturation in submicron CMOS transistor compensates degradation of the output power and the power efficiency. Furthermore, dual-band CMOS RF power amplifier circuit using LC resonant circuit techniques have been investigated and fabricated by using 0.13 μ mCMOS process technology. And thus, the dual band operation of 1.0GHz and the 2.4GHz band have been achieved with more than 5dBm output power at 1.5-V power supply voltage. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Power Amplifier / Dual Band / CMOS / LC Resonance / Switch control / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 421, MW2007-145, pp. 45-50, Jan. 2008. | |
| Paper # | MW2007-145 | |
| Date of Issue | 2008-01-09 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-214 MW2007-145 Link to ES Tech. Rep. Archives: ED2007-214 MW2007-145 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2008-01-16 - 2008-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC, High-speed and high-frequency devices |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2008-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Examination of dual band CMOS RF power amplifier circuit |
| Sub Title (in English) | |
| Keyword(1) | Power Amplifier |
| Keyword(2) | Dual Band |
| Keyword(3) | CMOS |
| Keyword(4) | LC Resonance |
| Keyword(5) | Switch control |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Jun Kikuchi |
| 1st Author's Affiliation | Gunma University (Gunma Univ.) |
| 2nd Author's Name | Hisayasu Sato |
| 2nd Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corporation) |
| 3rd Author's Name | Noboru Ishihara |
| 3rd Author's Affiliation | Gunma University (Gunma Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-01-17 09:45:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2007-214, MW2007-145 |
| Volume (vol) | vol.107 |
| Number (no) | no.420(ED), no.421(MW) |
| Page | pp.45-50 |
| #Pages | 6 |
| Date of Issue | 2008-01-09 (ED, MW) |
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