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Paper Abstract and Keywords
Presentation 2008-01-17 09:45
Examination of dual band CMOS RF power amplifier circuit
Jun Kikuchi (Gunma Univ.), Hisayasu Sato (Renesas Technology Corporation), Noboru Ishihara (Gunma Univ.) ED2007-214 MW2007-145 Link to ES Tech. Rep. Archives: ED2007-214 MW2007-145
Abstract (in Japanese) (See Japanese page) 
(in English) Dual-band CMOS RF power amplifier circuit design techniques have been studied. In CMOS power amplifier design with low power supply voltage, it is clarified analytically that current mode design considering small parasitic impedances of chip layout. And carrier velocity saturation in submicron CMOS transistor compensates degradation of the output power and the power efficiency. Furthermore, dual-band CMOS RF power amplifier circuit using LC resonant circuit techniques have been investigated and fabricated by using 0.13 μ mCMOS process technology. And thus, the dual band operation of 1.0GHz and the 2.4GHz band have been achieved with more than 5dBm output power at 1.5-V power supply voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) Power Amplifier / Dual Band / CMOS / LC Resonance / Switch control / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 421, MW2007-145, pp. 45-50, Jan. 2008.
Paper # MW2007-145 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-214 MW2007-145 Link to ES Tech. Rep. Archives: ED2007-214 MW2007-145

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To MW 
Conference Code 2008-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Examination of dual band CMOS RF power amplifier circuit 
Sub Title (in English)  
Keyword(1) Power Amplifier  
Keyword(2) Dual Band  
Keyword(3) CMOS  
Keyword(4) LC Resonance  
Keyword(5) Switch control  
1st Author's Name Jun Kikuchi  
1st Author's Affiliation Gunma University (Gunma Univ.)
2nd Author's Name Hisayasu Sato  
2nd Author's Affiliation Renesas Technology Corporation (Renesas Technology Corporation)
3rd Author's Name Noboru Ishihara  
3rd Author's Affiliation Gunma University (Gunma Univ.)
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Date Time 2008-01-17 09:45:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-ED2007-214,IEICE-MW2007-145 
Volume (vol) IEICE-107 
Number (no) no.420(ED), no.421(MW) 
Page pp.45-50 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-01-09,IEICE-MW-2008-01-09 

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