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Paper Abstract and Keywords
Presentation 2008-01-16 14:50
C-band High Efficiency GaN HEMT Power Amplifiers
Koji Yamanaka, Hiroshi Otsuka, Kazutomi Mori, Hifumi Noto (Mitsubishi Elec. Corp.) ED2007-210 MW2007-141 Link to ES Tech. Rep. Archives: ED2007-210 MW2007-141
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, GaN HEMT high power amplifiers operating at C-band are presented. Cat-CVD technique and cell division configuration were employed for more than 100W output powers at C-band. 167W output power was extracted from a single chip GaN HEMT with 7W/mm power density. 2-chip amplifier have recorded 220W output power at C-band, which is the highest output power ever reported for GaN HEMT amplifiers at C-band and higher bands. Moreover, by employing a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequencies, more than 50% efficiency was obtained with 60W output power over 10% relative bandwidth.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / High-voltage techniques / MODFET power amplifiers / Pulse measurements / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 421, MW2007-141, pp. 23-28, Jan. 2008.
Paper # MW2007-141 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-210 MW2007-141 Link to ES Tech. Rep. Archives: ED2007-210 MW2007-141

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To MW 
Conference Code 2008-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) C-band High Efficiency GaN HEMT Power Amplifiers 
Sub Title (in English)  
Keyword(1) GaN HEMT  
Keyword(2) High-voltage techniques  
Keyword(3) MODFET power amplifiers  
Keyword(4) Pulse measurements  
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1st Author's Name Koji Yamanaka  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
2nd Author's Name Hiroshi Otsuka  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
3rd Author's Name Kazutomi Mori  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
4th Author's Name Hifumi Noto  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.)
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Speaker
Date Time 2008-01-16 14:50:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-ED2007-210,IEICE-MW2007-141 
Volume (vol) IEICE-107 
Number (no) no.420(ED), no.421(MW) 
Page pp.23-28 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-01-09,IEICE-MW-2008-01-09 


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