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| Presentation | 2008-01-16 14:50 C-band High Efficiency GaN HEMT Power Amplifiers Koji Yamanaka, Hiroshi Otsuka, Kazutomi Mori, Hifumi Noto (Mitsubishi Elec. Corp.)  ED2007-210 MW2007-141 Link to ES Tech. Rep. Archives: ED2007-210 MW2007-141 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, GaN HEMT high power amplifiers operating at C-band are presented. Cat-CVD technique and cell division configuration were employed for more than 100W output powers at C-band. 167W output power was extracted from a single chip GaN HEMT with 7W/mm power density. 2-chip amplifier have recorded 220W output power at C-band, which is the highest output power ever reported for GaN HEMT amplifiers at C-band and higher bands. Moreover, by employing a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequencies, more than 50% efficiency was obtained with 60W output power over 10% relative bandwidth. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN HEMT / High-voltage techniques / MODFET power amplifiers / Pulse measurements / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 421, MW2007-141, pp. 23-28, Jan. 2008. | |
| Paper # | MW2007-141 | |
| Date of Issue | 2008-01-09 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-210 MW2007-141 Link to ES Tech. Rep. Archives: ED2007-210 MW2007-141 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2008-01-16 - 2008-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC, High-speed and high-frequency devices |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2008-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | C-band High Efficiency GaN HEMT Power Amplifiers |
| Sub Title (in English) | |
| Keyword(1) | GaN HEMT |
| Keyword(2) | High-voltage techniques |
| Keyword(3) | MODFET power amplifiers |
| Keyword(4) | Pulse measurements |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koji Yamanaka |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
| 2nd Author's Name | Hiroshi Otsuka |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
| 3rd Author's Name | Kazutomi Mori |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
| 4th Author's Name | Hifumi Noto |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Elec. Corp.) |
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| Speaker | 1 |
| Date Time | 2008-01-16 14:50:00 |
| Presentation Time | 25 |
| Registration for | MW |
| Paper # | IEICE-ED2007-210,IEICE-MW2007-141 |
| Volume (vol) | IEICE-107 |
| Number (no) | no.420(ED), no.421(MW) |
| Page | pp.23-28 |
| #Pages | IEICE-6 |
| Date of Issue | IEICE-ED-2008-01-09,IEICE-MW-2008-01-09 |
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