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Paper Abstract and Keywords
Presentation 2008-01-16 14:25
GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications
Hiroaki Sano, Norihiko Ui, Seigo Sano (Eudyna Devices) ED2007-209 MW2007-140 Link to ES Tech. Rep. Archives: ED2007-209 MW2007-140
Abstract (in Japanese) (See Japanese page) 
(in English) Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at drain voltage of 50V. At first, a 2.1GHz-band Doherty amplifier demonstrating a saturated output power (Psat) of 57.5dBm (560W) was designed, and then a 2.5GHz-band Doherty amplifier exhibiting a Psat of 54dBm (250W) was developed. Both Doherty amplifiers showed the drain efficiency of more than 50% at 6dB back-off power. The Doherty networks were designed with accurate large signal models and the measured results were in good agreement with the simulated results. We investigated the linearity using digital pre-distortion system, and the drain efficiency of more than 46% was obtained at 8dB back-off power achieving ACLR of less than -54dBc with common W-CDMA 2-carrier signal with peak to average power ratio of 7.8dB. These superior characteristics of GaN HEMT Doherty amplifiers showed good suitability for the base station transmitter system.
Keyword (in Japanese) (See Japanese page) 
(in English) Doherty / GaN HEMT / DPD / power amplifier / W-CDMA / WiMAX / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 421, MW2007-140, pp. 17-22, Jan. 2008.
Paper # MW2007-140 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-209 MW2007-140 Link to ES Tech. Rep. Archives: ED2007-209 MW2007-140

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To MW 
Conference Code 2008-01-ED-MW 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications 
Sub Title (in English)  
Keyword(1) Doherty  
Keyword(2) GaN HEMT  
Keyword(3) DPD  
Keyword(4) power amplifier  
Keyword(5) W-CDMA  
Keyword(6) WiMAX  
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Keyword(8)  
1st Author's Name Hiroaki Sano  
1st Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
2nd Author's Name Norihiko Ui  
2nd Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
3rd Author's Name Seigo Sano  
3rd Author's Affiliation Eudyna Devices Inc. (Eudyna Devices)
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Speaker
Date Time 2008-01-16 14:25:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-ED2007-209,IEICE-MW2007-140 
Volume (vol) IEICE-107 
Number (no) no.420(ED), no.421(MW) 
Page pp.17-22 
#Pages IEICE-6 
Date of Issue IEICE-ED-2008-01-09,IEICE-MW-2008-01-09 


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