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| Presentation | 2008-01-16 14:25 GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications Hiroaki Sano, Norihiko Ui, Seigo Sano (Eudyna Devices)  ED2007-209 MW2007-140 Link to ES Tech. Rep. Archives: ED2007-209 MW2007-140 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at drain voltage of 50V. At first, a 2.1GHz-band Doherty amplifier demonstrating a saturated output power (Psat) of 57.5dBm (560W) was designed, and then a 2.5GHz-band Doherty amplifier exhibiting a Psat of 54dBm (250W) was developed. Both Doherty amplifiers showed the drain efficiency of more than 50% at 6dB back-off power. The Doherty networks were designed with accurate large signal models and the measured results were in good agreement with the simulated results. We investigated the linearity using digital pre-distortion system, and the drain efficiency of more than 46% was obtained at 8dB back-off power achieving ACLR of less than -54dBc with common W-CDMA 2-carrier signal with peak to average power ratio of 7.8dB. These superior characteristics of GaN HEMT Doherty amplifiers showed good suitability for the base station transmitter system. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Doherty / GaN HEMT / DPD / power amplifier / W-CDMA / WiMAX / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 421, MW2007-140, pp. 17-22, Jan. 2008. | |
| Paper # | MW2007-140 | |
| Date of Issue | 2008-01-09 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-209 MW2007-140 Link to ES Tech. Rep. Archives: ED2007-209 MW2007-140 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2008-01-16 - 2008-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC, High-speed and high-frequency devices |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2008-01-ED-MW |
| Language | English (Japanese title is available) |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications |
| Sub Title (in English) | |
| Keyword(1) | Doherty |
| Keyword(2) | GaN HEMT |
| Keyword(3) | DPD |
| Keyword(4) | power amplifier |
| Keyword(5) | W-CDMA |
| Keyword(6) | WiMAX |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroaki Sano |
| 1st Author's Affiliation | Eudyna Devices Inc. (Eudyna Devices) |
| 2nd Author's Name | Norihiko Ui |
| 2nd Author's Affiliation | Eudyna Devices Inc. (Eudyna Devices) |
| 3rd Author's Name | Seigo Sano |
| 3rd Author's Affiliation | Eudyna Devices Inc. (Eudyna Devices) |
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| Speaker | Author-1 |
| Date Time | 2008-01-16 14:25:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2007-209, MW2007-140 |
| Volume (vol) | vol.107 |
| Number (no) | no.420(ED), no.421(MW) |
| Page | pp.17-22 |
| #Pages | 6 |
| Date of Issue | 2008-01-09 (ED, MW) |
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