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| Presentation | 2008-01-16 15:25 An 87W AlGaN/GaN HEMT for X-band Pulse Operation Makoto Nishihara, Takashi Tamamoto, Kazutaka Inoue, Masahiro Nishi, Seigo Sano (Eudyna)  ED2007-211 MW2007-142 Link to ES Tech. Rep. Archives: ED2007-211 MW2007-142 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technology is extension of well-established Eudyna commercial L-/S-band AlGan/GaN HEMT technology. The device shows output power of over 60W and a high linear gain of 9.6dB in wide frequency range 9.5-10.5 GHz, operating at 40V drain bias voltage with the pulsed conditions at a duty of 10% with a pulse width of 100usec. And we developed a device consists of 4-dies of AlGaN/GaN chip , the device exhibits output power of over 87W at 10GHz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN / GaN / HEMT / X-band / Hight Power / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 420, ED2007-211, pp. 29-31, Jan. 2008. | |
| Paper # | ED2007-211 | |
| Date of Issue | 2008-01-09 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-211 MW2007-142 Link to ES Tech. Rep. Archives: ED2007-211 MW2007-142 |
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| Conference Information | |
| Committee | ED MW |
| Conference Date | 2008-01-16 - 2008-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC, High-speed and high-frequency devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-01-ED-MW |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | An 87W AlGaN/GaN HEMT for X-band Pulse Operation |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | HEMT |
| Keyword(4) | X-band |
| Keyword(5) | Hight Power |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Makoto Nishihara |
| 1st Author's Affiliation | Eudyna devices (Eudyna) |
| 2nd Author's Name | Takashi Tamamoto |
| 2nd Author's Affiliation | Eudyna devices (Eudyna) |
| 3rd Author's Name | Kazutaka Inoue |
| 3rd Author's Affiliation | Eudyna devices (Eudyna) |
| 4th Author's Name | Masahiro Nishi |
| 4th Author's Affiliation | Eudyna devices (Eudyna) |
| 5th Author's Name | Seigo Sano |
| 5th Author's Affiliation | Eudyna devices (Eudyna) |
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| Speaker | Author-1 |
| Date Time | 2008-01-16 15:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2007-211, MW2007-142 |
| Volume (vol) | vol.107 |
| Number (no) | no.420(ED), no.421(MW) |
| Page | pp.29-31 |
| #Pages | 3 |
| Date of Issue | 2008-01-09 (ED, MW) |
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